The PJQ5560A-AU from PANJIT Semiconductor is an Automotive-Qualified N-Channel Enhancement Mode MOSFET. It has a drain-source breakdown voltage of over 60 V, a gate threshold voltage of 2.1 V, and a drain-source on-resistance of 3.4 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 190 A and a power dissipation of less than 3.3 W. It features a green molding compound as per the IEC 61249 standard and offers excellent figure of merit (FOM). This RoHS-compliant MOSFET supports a logic-level drive, thereby enhancing its compatibility with low-voltage systems. It is available in a surface-mount package that measures 5 x 5.8 x 1.1 mm.