RM08P100S2

Note : Your request will be directed to Rectron Semiconductor.

RM08P100S2 Image

The RM08P100S2 from Rectron Semiconductor is a MOSFET with Continous Drain Current -0.8 A, Drain Source Resistance 1000 to 1450 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for RM08P100S2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM08P100S2
  • Manufacturer
    Rectron Semiconductor
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.8 A
  • Drain Source Resistance
    1000 to 1450 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    7.8 nC
  • Power Dissipation
    1.38 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power Management, Video moniter, Halogen free

Technical Documents