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ADP480120W3-L Image

The ADP480120W3-L from STMicroelectronics is an Automotive Qualified MOSFET Power Module that has been optimized for hybrid and electric vehicles traction inverters.  It has a drain-source breakdown voltage of up to 1200 V, a gate threshold voltage of 3.1 V, and a drain-source on-resistance of 2.6 milli-ohms. This Power MOSFET has a continuous drain current of up to 488 A and a power dissipation of less than 869 W.  It features switches based on silicon carbide power MOSFETs of the third generation, which are characterized by very low drain-source on-resistance, very limited switching losses, and outstanding performances under synchronous rectification working mode. This MOSFET ensures excellent operating efficiency in the final application and saves the battery charging cycle. It includes a copper base plate with a pin-fin base structure enabling direct fluid cooling for minimizing thermal resistance.

This AQG-324-qualified MOSFET has a dedicated pin-out designed to achieve the best switching performance, and press-fit pins to ensure an optimal connection with the driving board. It is available in a module that measures 154.5 X 142.5 mm and is ideal for main inverter (electric traction) applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    1200 V Automotive Qualified MOSFET Power Module


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Dimensions
    154.5 X 142.5 mm
  • Continous Drain Current
    488 A
  • Drain Source Resistance
    2.60 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -5 to 18 V
  • Gate Source Threshold Voltage
    3.1 V
  • Gate Charge
    1258 nC
  • Power Dissipation
    869 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
  • Qualification
  • RoHS Compliant
  • Package Type
  • Package
  • Applications
    Main inverter (electric traction)

Technical Documents