Note : Your request will be directed to STMicroelectronics.

SH68N65DM6AG Image

The SH68N65DM6AG from STMicroelectronics is an Automotive Qualified N-Channel Power MOSFET Module that is ideal for switching applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 41 milli-ohms. This module has a continuous drain current of up to 64 A and a power dissipation of less than 379 W. It is based on the half-bridge topology and integrates two N-Channel Enhancement Mode power MOSFETs in a very compact and rugged package. This AQG 324-qualified MOSFET module is fabricated on a dice-on direct bond copper (DBC) substrate and includes an isolated top-side thermal pad, resulting in low thermal resistance. It offers a high design flexibility that enables multiple configurations, including phase legs, boost, and single switches through different combinations of internal power switches. This power MOSFET is available in a surface-mount package that measures 32.20 x 24.80 x 5.40 mm.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    Automotive Qualified N-Channel Power MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Continous Drain Current
    64 A
  • Drain Source Resistance
    35 milli-ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    25 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    116 nC
  • Power Dissipation
    379 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Switching applications

Technical Documents