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GaN Power Transistors from Manufacturers in United States - Page 14

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 14 of 15
EPC2101 Image
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Efficient Power Conversion - EPC2101

GaN Power Transistor from Efficient Power Conversion
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
2 to 11.5 milli-ohm
Continous Drain Current:
10 to 40 A
Pulsed Drain Current:
80 to 350 A
Total Charge:
3.3 to 17 nC
Input Capacitance:
360 to 1720 pF
Output Capacitance:
190 to 1320 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Point-of-Load (POL) Converte...
Dimensions:
6.05 x 2.3 mm
more info
EPC2203 Image
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Efficient Power Conversion - EPC2203

GaN Power Transistor from Efficient Power Conversion
80 V AEC-Q101 Qualified GaN Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
53 to 80 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
17 A
Total Charge:
670 to 830 nC
Input Capacitance:
73 to 88 pF
Output Capacitance:
47 to 71 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Lidar/pulsed power applications, High power densit...
Dimensions:
0.9 x 0.9 mm
more info
EPC2219 Image
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Efficient Power Conversion - EPC2219

GaN Power Transistor from Efficient Power Conversion
65 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
65 V
Drain Source Resistance:
1700 to 3300 milli-ohm
Continous Drain Current:
0.5 A
Pulsed Drain Current:
0.5 A
Total Charge:
49 to 64 nC
Input Capacitance:
7 to 10 pF
Output Capacitance:
2 to 3 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Lidar/pulsed power applications, High speed gate d...
Dimensions:
0.9 x 0.9 mm
more info
EPC2024 Image
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Efficient Power Conversion - EPC2024

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
560 A
Total Charge:
18 to 24 nC
Input Capacitance:
1920 to 2300 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
6.05 x 2.3 mm
more info
EPC2039 Image
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Efficient Power Conversion - EPC2039

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
20 to 25 milli-ohm
Continous Drain Current:
6.8 A
Pulsed Drain Current:
50 A
Total Charge:
1910 to 2370 nC
Input Capacitance:
210 to 260 pF
Output Capacitance:
115 to 175 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Ultra High Speed DC-DC Conversion, Wireless Power ...
Dimensions:
1.35 x 1.35 mm
more info
EPC2102 Image
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Efficient Power Conversion - EPC2102

GaN Power Transistor from Efficient Power Conversion
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
3.6 to 4.9 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
220 A
Total Charge:
8 to 11 nC
Input Capacitance:
850 to 1020 pF
Output Capacitance:
500 to 915 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC
Dimensions:
6.05 x 2.3 mm
more info
EPC2030 Image
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Efficient Power Conversion - EPC2030

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.8 to 2.4 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
490 A
Total Charge:
17 to 22 nC
Input Capacitance:
1960 to 2360 pF
Output Capacitance:
1120 to 1680 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
4.6 x 2.6 mm
more info
EPC2020 Image
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Efficient Power Conversion - EPC2020

GaN Power Transistor from Efficient Power Conversion
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
1.5 to 2.2 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
470 A
Total Charge:
16 to 20 nC
Input Capacitance:
1780 to 2140 pF
Output Capacitance:
1020 to 1530 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
6.05 x 2.3 mm
more info
EPC2108 Image
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Efficient Power Conversion - EPC2108

GaN Power Transistor from Efficient Power Conversion
60 to 100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 to 100 V
Drain Source Resistance:
150 to 3300 milli-ohm
Continous Drain Current:
0.5 to 1.7 A
Pulsed Drain Current:
0.5 to 5.5 A
Total Charge:
44 to 310 nC
Input Capacitance:
7 to 31 pF
Output Capacitance:
1.6 to 24 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC conversion, Class-D Audio, Wi...
Dimensions:
1.35 x 1.35 mm
more info
EPC2035 Image
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Efficient Power Conversion - EPC2035

GaN Power Transistor from Efficient Power Conversion
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
35 to 45 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
24 A
Total Charge:
880 to 1150 nC
Input Capacitance:
95 to 115 pF
Output Capacitance:
60 to 90 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Wireless Power Transf...
Dimensions:
0.9 x 0.9 mm
more info
EPC2014C Image
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Efficient Power Conversion - EPC2014C

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
12 to 16 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
60 A
Total Charge:
2 to 2.5 nC
Input Capacitance:
220 to 300 pF
Output Capacitance:
150 to 210 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC conversion, Class-D Audio, Wi...
Dimensions:
1.7 x 1.1 mm
more info
EPC2015C Image
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Efficient Power Conversion - EPC2015C

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.2 to 4 milli-ohm
Continous Drain Current:
53 A
Pulsed Drain Current:
235 A
Total Charge:
8.7 to 11.2 nC
Input Capacitance:
980 to 1180 pF
Output Capacitance:
710 to 1070 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
4.1 x 1.6 mm
more info
EPC8009 Image
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Efficient Power Conversion - EPC8009

GaN Power Transistor from Efficient Power Conversion
65 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
65 V
Drain Source Resistance:
90 to 130 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
7.5 A
Total Charge:
370 to 450 nC
Input Capacitance:
45 to 52 pF
Output Capacitance:
19 to 28 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Ultra High Speed DC-DC Conversion, RF Envelope Tra...
Dimensions:
2.1 x 0.85 mm
more info
EPC2103 Image
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Efficient Power Conversion - EPC2103

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
4 to 5.5 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
195 A
Total Charge:
6.5 to 8 nC
Input Capacitance:
730 to 880 pF
Output Capacitance:
445 to 790 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Motor Drive
Dimensions:
6.05 x 2.3 mm
more info
EPC2105 Image
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Efficient Power Conversion - EPC2105

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
2.4 to 14.5 milli-ohm
Continous Drain Current:
10 to 40 A
Pulsed Drain Current:
70 to 300 A
Total Charge:
2.7 to 15 nC
Input Capacitance:
300 to 1410 pF
Output Capacitance:
170 to 1170 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC
Dimensions:
6.05 x 2.3 mm
more info
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