EPC7019G

GaN Power Transistor by EPC Space (8 more products)

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The EPC7019G from EPC Space is a GaN Power Transistor that has been specifically designed for critical applications in high reliability or commercial satellite space environments. It has a gate threshold voltage of 0.8 to 2.5 V and a drain-source voltage of 40 V with a drain-source resistance of 3.7 milliohm. It has a gate-source voltage of -4 to 6 V. This GaN transistor has a continuous drain current of 95 A and a pulsed drain current of 530 A. It has exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain to source resistance. The lateral structure of the die provides a very low gate charge and offers extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, and higher efficiencies. This transistor is available in a surface-mount package that measures 8.0 x 5.6 mm and is ideal for applications such as satellite and avionics, deep space probes, high-speed rad-hard DC-DC conversion, nuclear facilities, and rad-hard motor controllers.

Product Specifications

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Product Details

  • Part Number
    EPC7019G
  • Manufacturer
    EPC Space
  • Description
    40 V GaN Power Transistor for Space Applications

General

  • Configuration
    Dual
  • Industry
    Space
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    3.7 milliohm
  • Continous Drain Current
    95 A
  • Pulsed Drain Current
    530 A
  • Total Charge
    22 nC
  • Input Capacitance
    2830 pF
  • Output Capacitance
    1660 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Applications
    Satellite and Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers
  • Dimensions
    8.0 x 5.6 mm

Technical Documents