GPI65015TO

GaN Power Transistor by GaNPower International (21 more products)

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The GPI65015TO from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.9 V, Drain Source Voltage 650 V, Drain Source Resistance 92 to 110 milli-ohm, Continous Drain Current 15 A, Total Charge 3.3 nC. Tags: Through Hole. More details for GPI65015TO can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPI65015TO
  • Manufacturer
    GaNPower International
  • Description
    650 V, 92 to 110 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.9 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    92 to 110 milli-ohm
  • Continous Drain Current
    15 A
  • Total Charge
    3.3 nC
  • Input Capacitance
    123 pF
  • Output Capacitance
    29 pF
  • Turn-on Delay Time
    5.3 ns
  • Turn-off Delay Time
    18 ns
  • Rise Time
    12 ns
  • Fall Time
    13 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO 220
  • Applications
    Switching Power Applications, Adapters, Quick Chargers

Technical Documents