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AONV110A60 Image

The AONV110A60 from Alpha and Omega Semiconductor is an N-Channel Enhancement Mode Power MOSFET. This single-channel power MOSFET has a gate-source voltage of ±20 V with a drain-source voltage of 600 and a drain-source resistance of less than 0.11 ohms. It has a continuous drain current of 35 A and a pulsed drain current of 140 A. It has a gate charge of 72 nC and power dissipation of up to 357 W.

This MOSFET is based on a proprietary aMOS5 technology that offers a low on-state resistance with optimized switching parameters for better EMI performance. It consists of an enhanced body diode to provide robustness and fast reverse recovery. This power MOSFET is available in a surface-mount package and is ideal for PFC and PWM stages (LLC, FSFB, TTF) of server, telecom, industrial, UPS, and solar inverters applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    600 V N-Channel Enhancement MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Continous Drain Current
    20 to 35 A
  • Drain Source Resistance
    86 to 110 milliohm
  • Drain Source Breakdown Voltage
    600 to 700 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2400 to 3600 mV
  • Gate Charge
    72 nC
  • Power Dissipation
    357 W
  • Temperature operating range
    -55 to 150 degree C
  • Industry
  • Package Type
    Surface Mount
  • Package
  • Applications
    PFC and PWM stages of Server, Telecom, Industrial, UPS, and Solar Inverters

Technical Documents