The AOTL66935 from Alpha & Omega Semiconductor is an N-Channel MOSFET that is ideal for hot swap and load switch applications. It has a drain-source breakdown voltage of over 100 V, gate threshold voltage of 2.65 V, and a drain-source on-resistance of less than 3.2 milli-ohms. This MOSFET has a continuous drain current of up to 52 A and a power dissipation of less than 500 W. It is based on the Trench Power AlphaSGT technology and combines low drain-source on-resistance and a wide safe operating area (SOA) to achieve high efficiency. This MOSFET can handle a high in-rush current, enabling it to support faster start-up and shorter downtime. It is 100% UIG tested and has a junction temperature of up to 175°C. This RoHS-compliant MOSFET is available in a surface-mount package.