DMWSH120H90SM4Q

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DMWSH120H90SM4Q Image

The DMWSH120H90SM4Q from Diodes Incorporated is an Automotive Qualified N-Channel SiC Power MOSFET that is ideal for EV charging systems, high voltage DC-DC converters, data centers/telecom power supplies, high voltage BLDC motor controls, AC-DC converters, and solar inverter applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 97.5 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 40 A and a power dissipation of less than 235 W. It has been designed to minimize the on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications. This RoHS-compliant MOSFET is available in a through-hole package that measures 40.61 x 15.75 mm.

Product Specifications

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Product Details

  • Part Number
    DMWSH120H90SM4Q
  • Manufacturer
    Diodes Incorporated
  • Description
    Automotive Qualified N-Channel SiC Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    40.61 x 15.75 mm
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    97.5 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Threshold Voltage
    2.5 V
  • Power Dissipation
    235 W
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Applications
    EV charging systems, High voltage DC-DC converters, Data centers/telecom power supplies, High voltage BLDC motor controls, AC-DC converters, and Solar Inverter Applications

Technical Documents