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G86N06K

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The G86N06K from Goford Semiconductor is a MOSFET with Continous Drain Current 68 A, Drain Source Resistance 7.5 to 8.4 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for G86N06K can be seen below.

Product Specifications

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Product Details

  • Part Number
    G86N06K
  • Manufacturer
    Goford Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode View all
  • Transistor Polarity
    N-Channel View all
  • Number of Channels
    Single View all
  • Continous Drain Current
    68 A
  • Drain Source Resistance
    7.5 to 8.4 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    55 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    TO-252
  • Applications
    Power switch, DC/DC converters

Technical Documents
View details on the manufacturer's website
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