90N100E

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The 90N100E from MOSPEC SEMICONDUCTOR is a MOSFET with Continous Drain Current 58 to 90 mA, Drain Source Resistance 5.6 to 6.7 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for 90N100E can be seen below.

Product Specifications

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Product Details

  • Part Number
    90N100E
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    100 V, 58 to 90 mA, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    58 to 90 mA
  • Drain Source Resistance
    5.6 to 6.7 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    57.9 to 110 nC
  • Switching Speed
    19.8 to 92 ns
  • Power Dissipation
    128 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Networking, Load Switch, LED applications, Quick Charger
  • Note
    Input Capacitance :- 7180 pF

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