UF4SC120023K4S

MOSFET by Qorvo (3 more products)

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The UF4SC120023K4S from Qorvo is an N-Channel Enhancement Mode SiC MOSFET. It is based on a unique ‘cascade’ circuit configuration in which a normally-on SiC JFET is co-packaged with Si MOSFET to produce a normally-off SiC FET device. It has a gate-source voltage of up to 25 V and a gate threshold voltage of 4.8 V. This SiC MOSET has a drain-source breakdown voltage of over 1200 V and a drain-source on-resistance of less than 29 Ω. It has a continuous drain current of up to 53 A and power dissipation of 385 W. This MOSFET is available as a through-hole package and is ideal for EV charging, PV inverters, and switch-mode power supplies, power factor correction modules, motor drives, and induction heating applications.

Product Specifications

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Product Details

  • Part Number
    UF4SC120023K4S
  • Manufacturer
    Qorvo
  • Description
    N Channel Enhancement Mode SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    53 A
  • Drain Source Resistance
    29 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    25 V
  • Gate Source Threshold Voltage
    4.8 V
  • Gate Charge
    37.8 nC
  • Power Dissipation
    385 W
  • Temperature operating range
    -55 to 175 degree C
  • Industry
    Automotive, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4L
  • Applications
    Power factor correction modules, Switch mode power supplies, PV inverter, Motor Drives, Induction Heating, EV charging

Technical Documents