The UF4SC120023K4S from Qorvo is an N-Channel Enhancement Mode SiC MOSFET. It is based on a unique ‘cascade’ circuit configuration in which a normally-on SiC JFET is co-packaged with Si MOSFET to produce a normally-off SiC FET device. It has a gate-source voltage of up to 25 V and a gate threshold voltage of 4.8 V. This SiC MOSET has a drain-source breakdown voltage of over 1200 V and a drain-source on-resistance of less than 29 Ω. It has a continuous drain current of up to 53 A and power dissipation of 385 W. This MOSFET is available as a through-hole package and is ideal for EV charging, PV inverters, and switch-mode power supplies, power factor correction modules, motor drives, and induction heating applications.
