RM12N100S8

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RM12N100S8 Image

The RM12N100S8 from Rectron Semiconductor is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 8 to 13.2 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RM12N100S8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM12N100S8
  • Manufacturer
    Rectron Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    8 to 13.2 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    37.8 to 76 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    DC/DC Converter, Ideal for high-frequency switching and synchronous rectification, Halogen free

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