RQK0604IGDQA

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The RQK0604IGDQA from Renesas is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 111 to 180 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -12 to 12 V, Gate Charge 3.4 nC. Tags: Surface Mount. More details for RQK0604IGDQA can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQK0604IGDQA
  • Manufacturer
    Renesas
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    111 to 180 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Charge
    3.4 nC
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MPAK
  • Applications
    Power Switching

Technical Documents

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