The GCMX030A170S1-E1 from SemiQ is a Silicon Carbide MOSFET. It has a drain-source breakdown voltage of 1700 V, a power dissipation of 341 W, and a drain-source on-resistance of 31 milliohms. This high-speed switching MOSFET has a continuous drain current of 66 A and a pulsed drain current of 84 A. It offers low switching losses and low junction-to-case thermal resistance. This MOSFET features a Kelvin reference for stable operation and has an isolated backplate. It is avalanche tested to 600 mJ. This RoHS-compliant MOSFET has a very rugged and easy mount design with direct mounting to the heatsink. It is available in a screw-mount package that measures 38.1 x 26.9 mm and is ideal for photovoltaic inverters, battery chargers, server power supplies, and energy storage systems.
