The MG800FXF1JMS3 from Toshiba is an N-Channel Enhancement Mode SiC MOSFET that is ideal for motor controllers (including rail traction) and high-power switching applications. It has a drain-source voltage of up to 3300 V and a gate threshold voltage of 4.8 V. This MOSFET has a continuous drain current of up to 800 A and a pulsed drain current of less than 1600 A. It connects a SiC Schottky barrier diode on the high-side and a SiC MOSFET on the low side in a single package. This MOSFET is also equipped with a negative temperature coefficient (NTC) thermistor for temperature sensing. It ensures low stray inductance and thermal resistance for maximum performance. This SiC MOSFET is manufactured on a new generation of standard package design that can be paralleled for easy handling. It is available in a module that measures 122.5 x 99.5 mm.