MG800FXF1JMS3

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The MG800FXF1JMS3 from Toshiba is an N-Channel Enhancement Mode SiC MOSFET that is ideal for motor controllers (including rail traction) and high-power switching applications. It has a drain-source voltage of up to 3300 V and a gate threshold voltage of 4.8 V. This MOSFET has a continuous drain current of up to 800 A and a pulsed drain current of less than 1600 A. It connects a SiC Schottky barrier diode on the high-side and a SiC MOSFET on the low side in a single package. This MOSFET is also equipped with a negative temperature coefficient (NTC) thermistor for temperature sensing. It ensures low stray inductance and thermal resistance for maximum performance. This SiC MOSFET is manufactured on a new generation of standard package design that can be paralleled for easy handling. It is available in a module that measures 122.5 x 99.5 mm.

Product Specifications

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Product Details

  • Part Number
    MG800FXF1JMS3
  • Manufacturer
    Toshiba
  • Description
    3300 V N-Channel Enhancement Mode SiC MOSFET for Motor Control Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Continous Drain Current
    800 A
  • Drain Source Resistance
    2.75 ohm
  • Drain Source Breakdown Voltage
    3300 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    4.8 V
  • Power Dissipation
    4680 W
  • Temperature operating range
    -40 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Module
  • Applications
    High-Power Switching, Motor Controllers (including rail traction)

Technical Documents