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GaN Power Transistors from Manufacturers in United States - Page 13

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 13 of 15
EPC2207 Image
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Efficient Power Conversion - EPC2207

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
15 to 22 milli-ohm
Continous Drain Current:
14 A
Pulsed Drain Current:
54 A
Total Charge:
4.5 to 5.9 nC
Input Capacitance:
454 to 600 pF
Output Capacitance:
130 to 195 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, Sync rectification for AC/DC & D...
Dimensions:
2.9 x 0.9 mm
more info
EPC2007C Image
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Efficient Power Conversion - EPC2007C

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
24 to 30 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
40 A
Total Charge:
1.6 to 2.2 nC
Input Capacitance:
170 to 220 pF
Output Capacitance:
110 to 165 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Class-D Audio, Wi...
Dimensions:
1.7 x 1.1 mm
more info
EPC2001C Image
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Efficient Power Conversion - EPC2001C

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.6 to 7 milli-ohm
Continous Drain Current:
36 A
Pulsed Drain Current:
150 A
Total Charge:
7.5 to 9 nC
Input Capacitance:
770 to 900 pF
Output Capacitance:
430 to 650 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High-Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
4.1 x 1.6 mm
more info
EPC2104 Image
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Efficient Power Conversion - EPC2104

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 6.8 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
180 A
Total Charge:
6.8 to 8.7 nC
Input Capacitance:
730 to 880 pF
Output Capacitance:
430 to 645 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Motor Drive
Dimensions:
6.05 x 2.3 mm
more info
EPC2012C Image
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Efficient Power Conversion - EPC2012C

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
70 to 100 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
22 A
Total Charge:
1 to 1.3 nC
Input Capacitance:
100 to 140 pF
Output Capacitance:
64 to 85 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC conversion, Class-D Audio, Wi...
Dimensions:
1.7 x 0.9 mm
more info
EPC2215 Image
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Efficient Power Conversion - EPC2215

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
6 to 8 milli-ohm
Continous Drain Current:
32 A
Pulsed Drain Current:
162 A
Total Charge:
13.6 to 17.7 nC
Input Capacitance:
1356 to 1790 pF
Output Capacitance:
390 to 585 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC/DC Conversion, Multi-level AC/DC...
Dimensions:
4.6 x 1.6 mm
more info
EPC2016C Image
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Efficient Power Conversion - EPC2016C

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
12 to 16 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
75 A
Total Charge:
3.4 to 4.5 nC
Input Capacitance:
360 to 420 pF
Output Capacitance:
210 to 310 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Speed DC-DC Conversion, Class-D Audio, High F...
Dimensions:
2.1 x 1.6 mm
more info
EPC2031 Image
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Efficient Power Conversion - EPC2031

GaN Power Transistor from Efficient Power Conversion
60 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
2 to 2.6 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
450 A
Total Charge:
16 to 21 nC
Input Capacitance:
1640 to 2000 pF
Output Capacitance:
980 to 1500 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
4.6 x 2.6 mm
more info
EPC2214 Image
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Efficient Power Conversion - EPC2214

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
15 to 20 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
47 A
Total Charge:
1.8 to 2.2 nC
Input Capacitance:
198 to 238 pF
Output Capacitance:
129 to 194 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
DC-DC Conversion, Wireless Power Transfer, Lidar/P...
Dimensions:
1.35 x 1.35 mm
more info
EPC2037 Image
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Efficient Power Conversion - EPC2037

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
400 to 550 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
2.4 A
Total Charge:
115 to 145 nC
Input Capacitance:
14 to 17 pF
Output Capacitance:
6.5 to 10 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Wireless Power Transf...
Dimensions:
0.9 x 0.9 mm
more info
EPC2206 Image
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Efficient Power Conversion - EPC2206

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
1.8 to 2.2 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
390 A
Total Charge:
15 to 19 nC
Input Capacitance:
1610 to 1940 pF
Output Capacitance:
1100 to 1650 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
48 V Automotive Power, Open Rack Server Architectu...
Dimensions:
6.05 x 2.3 mm
more info
EPC2038 Image
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Efficient Power Conversion - EPC2038

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2100 to 3300 milli-ohm
Continous Drain Current:
0.5 A
Pulsed Drain Current:
0.5 A
Total Charge:
44 nC
Input Capacitance:
7 to 8.4 pF
Output Capacitance:
1.6 to 2.4 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC Conversion, Wireless Power Transf...
Dimensions:
0.9 x 0.9 mm
more info
EPC2106 Image
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Efficient Power Conversion - EPC2106

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
55 to 70 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
18 A
Total Charge:
730 to 900 nC
Input Capacitance:
79 to 95 pF
Output Capacitance:
52 to 92 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Class-D Audio
Dimensions:
1.35 x 1.35 mm
more info
EPC8010 Image
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Efficient Power Conversion - EPC8010

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.4 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
120 to 160 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
7.5 A
Total Charge:
360 to 480 nC
Input Capacitance:
43 to 55 pF
Output Capacitance:
25 to 36 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Ultra High Speed DC-DC Conversion, RF Envelope Tra...
Dimensions:
2.1 x 0.85 mm
more info
EPC2036 Image
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Efficient Power Conversion - EPC2036

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
62 to 73 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
18 A
Total Charge:
700 to 910 nC
Input Capacitance:
75 to 90 pF
Output Capacitance:
50 to 75 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC Conversion, Wireless Power Transf...
Dimensions:
0.9 x 0.9 mm
more info
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