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GaN Power Transistors from Manufacturers in United States - Page 8

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 8 of 15
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EPC Space - JANSH2N7673UFCC

GaN Power Transistor from EPC Space
300 V, 2.3 to 4 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
300 V
Drain Source Resistance:
350 milli-ohm
Continous Drain Current:
2.3 to 4 A
Total Charge:
2.6 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-C
more info
TDG100E90BSP Image
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Teledyne e2v HiRel Electronics - TDG100E90BSP

GaN Power Transistor from Teledyne e2v HiRel Electronics
100V E-mode GaN transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
100 V
Drain Source Resistance:
17.5 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Applications:
High efficiency power conversion, High density pow...
more info
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Solid State Devices - SGR15E90M

GaN Power Transistor from Solid State Devices
900 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
900 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 to 18 nC
Input Capacitance:
1400 pF
Output Capacitance:
120 pF
Turn-on Delay Time:
70 ns
Turn-off Delay Time:
150 ns
Rise Time:
48 ns
Fall Time:
18 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC2252 Image
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Efficient Power Conversion - EPC2252

GaN Power Transistor from Efficient Power Conversion
AEC-Q101 Qualified Enhancement Mode Power Transistor

Product Specs

Configuration:
Single
Industry:
Automotive, Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
80 V
Drain Source Resistance:
8 milli-ohm
Continous Drain Current:
8.2 A
Pulsed Drain Current:
75 A
Total Charge:
3.5 nC
Input Capacitance:
440 pF
Output Capacitance:
190 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Automotive Lidar/TOF, 48 V Servers, Pulsed Power, ...
Dimensions:
1.5 x 1.5 mm
more info
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EPC Space - JANSH2N7677UFBC

GaN Power Transistor from EPC Space
200 V, 15 to 24 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
200 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
15 to 24 A
Total Charge:
7 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
more info
TDG650E30BSP Image
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Teledyne e2v HiRel Electronics - TDG650E30BSP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Silicon Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
PCB Mount
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.10 x 8.50 x 0.56 mm
more info
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Solid State Devices - SGF30E100Z8UB

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254Z
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC2304 Image
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Efficient Power Conversion - EPC2304

GaN Power Transistor from Efficient Power Conversion
200 V N-Channel Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
200 V
Drain Source Resistance:
3.1 milli-ohm
Continous Drain Current:
102 A
Pulsed Drain Current:
260 A
Total Charge:
24 nC
Input Capacitance:
3195 pF
Output Capacitance:
649 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Synchronous Rectification, AC/DC Chargers, SMPS, A...
Dimensions:
3 mm x 5 mm
more info
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EPC Space - JANSH2N7676UFBC

GaN Power Transistor from EPC Space
100 V, 29 to 46 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
13 milli-ohm
Continous Drain Current:
29 to 46 A
Total Charge:
11 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
more info
EPC2305 Image
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Efficient Power Conversion - EPC2305

GaN Power Transistor from Efficient Power Conversion
150 V N-Channel Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
2.2 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
329 A
Total Charge:
21 nC
Input Capacitance:
2900 pF
Output Capacitance:
920 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
High frequency DC/DC, AC/DC Chargers and Adaptors,...
Dimensions:
3 mm x 5 mm
more info
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EPC Space - JANSH2N7680UFGC

GaN Power Transistor from EPC Space
100 V, 57 to 90 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
5 milli-ohm
Continous Drain Current:
57 to 90 A
Total Charge:
12 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
more info
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Solid State Devices - SGF43E70-28

GaN Power Transistor from Solid State Devices
700 V, 39 to 76 milli-ohm, 43 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 48 V
Drain Source Voltage:
700 V
Drain Source Resistance:
39 to 76 milli-ohm
Continous Drain Current:
43 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nC
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
99 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LCC28
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC2218A Image
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Efficient Power Conversion - EPC2218A

GaN Power Transistor from Efficient Power Conversion
80 V N-Channel Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Automotive
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
80 V
Drain Source Resistance:
3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
231 A
Total Charge:
10.5 nC
Input Capacitance:
1189 pF
Output Capacitance:
562 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC Converters, BLDC Motor Drives, Sync Rectific...
Dimensions:
3.5 x 1.95 mm
more info
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EPC Space - EPC7002AC

GaN Power Transistor from EPC Space
40 V, 10 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
24 to 28 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
40 A
Total Charge:
3.4 nC
Input Capacitance:
312 pF
Output Capacitance:
270 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
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Solid State Devices - SGF48N20S1

GaN Power Transistor from Solid State Devices
200 V, 11 to 16 milli-ohm, 40 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
11 to 16 milli-ohm
Continous Drain Current:
40 A
Pulsed Drain Current:
200 A
Total Charge:
9 to 11 nC
Input Capacitance:
950 to 1140 pF
Output Capacitance:
450 to 680 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD1
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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