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MOSFETs from Manufacturers in China - Page 39

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 39 of 77
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Oriental Semiconductor - OSG65R180FT3F_NB

MOSFET from Oriental Semiconductor
650 V, 11 to 18 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 18 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
148 to 339 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
34 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F_NL
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - BL6601-6L

MOSFET from Galaxy Century Microelectronics
±12 V, -2.5 to 3.8 A Dual N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2.5 to 3.8 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
55 to 190 milli-ohm
Gate Source Voltage:
±12 V
Power Dissipation:
0.85 to 1.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Military, Industrial, Commercial
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
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Yangjie Electronic Technology - YJL3139KAE

MOSFET from Yangjie Electronic Technology
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
580 to 2000 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.18 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-523
Industry:
Industrial, Commercial
Applications:
Interfacing, Logic switch, Load switch, Power mana...
more info
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Goford Semiconductor - G2N65F

MOSFET from Goford Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
4000 to 4800 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supply (SMPS), Uninterruptible P...
more info
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Hunan Jingxin Microelectronics - ESGNT085R027

MOSFET from Hunan Jingxin Microelectronics
85 V, 140 to 180 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
140 to 180 A
Drain Source Breakdown Voltage:
85 V
Drain Source Resistance:
2.4 to 2.75 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
236 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG25R022TF

MOSFET from Oriental Semiconductor
250 V, 38 to 60 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 to 60 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
17 to 34 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - GBLN4405-3DL8

MOSFET from Galaxy Century Microelectronics
±20 V, 14 to 22 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
14 to 22 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
19 to 30 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
23 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3X3-8LC
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJQ50P03A

MOSFET from Yangjie Electronic Technology
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
5 to 11 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Industrial, Commercial
Applications:
High current load applications, Load switching, Ha...
more info
10N60 Image
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Goford Semiconductor - 10N60

MOSFET from Goford Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 10 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
620 to 750 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
162 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESJNN650R96

MOSFET from Hunan Jingxin Microelectronics
650 V, 37 to 48 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37 to 48 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
85 to 100 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
285 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG65R460FZF_NB

MOSFET from Oriental Semiconductor
650 V, 6.3 to 10 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.3 to 10 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
400 to 1120 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F_NL
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - BL1415DW

MOSFET from Galaxy Century Microelectronics
±10 V, -0.36 to 0.78 A Dual N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.36 to 0.78 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
1200 to 5000 milli-ohm
Gate Source Voltage:
±10 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJP118G08H

MOSFET from Yangjie Electronic Technology
85 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
118 A
Drain Source Breakdown Voltage:
85 V
Drain Source Resistance:
5 to 6.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
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Goford Semiconductor - 5N30A

MOSFET from Goford Semiconductor
300 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
1100 to 1300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
44 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
DC-DC & DC-AC Converters for telecom, industrial a...
more info
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Hunan Jingxin Microelectronics - ESGNR085R036

MOSFET from Hunan Jingxin Microelectronics
85 V, 100 to 120 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 to 120 A
Drain Source Breakdown Voltage:
85 V
Drain Source Resistance:
3.1 to 3.6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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