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MOSFETs from Manufacturers in China - Page 55

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 55 of 77
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Hunan Jingxin Microelectronics - ESNQ06R23

MOSFET from Hunan Jingxin Microelectronics
60 V, 23 to 35 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 to 35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
15 to 25 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
69 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG65R130K7T3ZAF

MOSFET from Oriental Semiconductor
650 V, 15.8 to 25 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15.8 to 25 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
99 to 248 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
178 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263-7L
Industry:
Automotive, Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Yangjie Electronic Technology - YJG110G08HR

MOSFET from Yangjie Electronic Technology
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
110 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.9 to 6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060-8L
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
G65P06F Image
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Goford Semiconductor - G65P06F

MOSFET from Goford Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-65 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
13 to 18 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
39 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESN6586

MOSFET from Hunan Jingxin Microelectronics
30 V, 33 to 43 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 43 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
9.5 to 18.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5x6-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Yangjie Electronic Technology - YJF50G12A

MOSFET from Yangjie Electronic Technology
120 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
7.5 to 11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
41 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220AB
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
06N06L Image
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Goford Semiconductor - 06N06L

MOSFET from Goford Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
36 to 50 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.96 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESN6230

MOSFET from Hunan Jingxin Microelectronics
40 V, 85 to 120 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 to 120 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.2 to 2.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5x6-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Yangjie Electronic Technology - BSS138DW

MOSFET from Yangjie Electronic Technology
50 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.34 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1100 to 3000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Industrial, Commercial
Applications:
Battery operated systems, Solid-state relays, Dire...
more info
G80P03K Image
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Goford Semiconductor - G80P03K

MOSFET from Goford Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-80 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
4.5 to 7.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESN6354

MOSFET from Hunan Jingxin Microelectronics
30 V, 59 to 76 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
59 to 76 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.0 to 3.6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5x6-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Yangjie Electronic Technology - YJB200G06B

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.3 to 2.9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
260 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
Consumer electronic power supply, Isolated DC-DC C...
more info
G65P06T Image
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Goford Semiconductor - G65P06T

MOSFET from Goford Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-65 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
14 to 18 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESN7466

MOSFET from Hunan Jingxin Microelectronics
30 V, 31 to 40 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 to 40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.5 to 18 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3x3-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Yangjie Electronic Technology - YJD110G08A

MOSFET from Yangjie Electronic Technology
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
110 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.2 to 7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
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