MOSFETs from Manufacturers in Korea, Republic of - Page 3

217 MOSFETs from 1 manufacturer meet your specification.
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217 MOSFETs from 1 Manufacturers
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12 V, 20.7 A, 1.63 W, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
20.7 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.85 to 5.8 milli-ohm
Gate Source Voltage:
±8 V
Power Dissipation:
1.63 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP
Industry:
Industrial, Commercial
Applications:
Portable Battery Protection
more info
12 V, 9.6 A, 0.83 W, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
9.6 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
3 to 12.5 milli-ohm
Gate Source Voltage:
±8 V
Power Dissipation:
0.83 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP
Industry:
Industrial, Commercial
Applications:
Portable Battery Protection
more info
12 V, 19 A, 1.63 W, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
19 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
2.1 to 6.1 milli-ohm
Gate Source Voltage:
±8 V
Power Dissipation:
1.63 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP
Industry:
Industrial, Commercial
Applications:
Portable Battery Protection
more info
12 V, 19 A, 1.63 W, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
19 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
2.1 to 6.1 milli-ohm
Gate Source Voltage:
±8 V
Power Dissipation:
1.63 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP
Industry:
Industrial, Commercial
Applications:
Portable Battery Protection
more info
700 V N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22.1 to 35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
88 to 99 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
431 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
Premium OLED TV, Soft-switching applications, Serv...
more info
700 V N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
115 to 130 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
417 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
Premium OLED TV, Soft-switching applications, Serv...
more info
JEDEC-Qualified 80 V Trench MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
211 to 298 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.3 to 2.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 to 300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TOLT
Industry:
Industrial, Commercial
Applications:
Trench power MOSFET technology, Single N-channel t...
more info
-40 V, -7.1 A, P-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7.1 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
20 to 37 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8L
Industry:
Commercial, Industrial
Applications:
Inverters, General purpose applications
more info
40 V, 56.9 to 85.0 A, N-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56.9 to 85.0 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.2 to 2.6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
34.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
more info
-40 V, -15.4 to -24.4 A, P-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-15.4 to -24.4 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
32 to 58 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
41.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Commercial, Industrial
Applications:
Inverters, General purpose applications
more info
40 V, 100 to 204.1 A, N-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 to 204.1 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.1 to 1.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
96.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN56
Industry:
Commercial, Industrial
more info
40 V, 90.1 to 142.4 A, N-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
90.1 to 142.4 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.6 to 2.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
73.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN56
Industry:
Commercial, Industrial
more info
-30 V, -12 A, P-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
7.3 to 14.5 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Industry:
Commercial, Industrial
Applications:
Load Switch, General purpose applications, Smart M...
more info
-30 V, -7 to -11 A, P-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to -11 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
13 to 27 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Industry:
Commercial, Industrial
Applications:
Load Switch, General purpose applications
more info
-30 V, -4.1 to -6.0 A, P-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.1 to -6.0 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
30.5 to 55.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Industry:
Commercial, Industrial
Applications:
Inverters, General purpose applications
more info

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