MOSFETs from Manufacturers in United States - Page 542

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9,089 MOSFETs from 25 Manufacturers
9,089 Products from 25 Manufacturers
Page 542 of 606
-12 to 12 V, 2 W, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
25 to 90 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
more info
-20 to 20 V, 2 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 1750 Degree C
Package:
SOIC-8
more info
-20 to 20 V, 3 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
60 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3 W
Temperature operating range:
-65 to 150 Degree C
Package:
SOT-223-4 / TO-261-4
more info
-20 to 20 V, 2.5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14.9 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Synchronous Buck for Vcore and Server, Notebook Ba...
more info
-25 to 25 V, 2 W, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-7.3 to 8.6 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
20.5 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Inverter, Synchronous Buck
more info
-20 to 20 V, 2.5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
DC/DC converter
more info
-20 to 20 V, 31 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
62 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Synchronous rectifier, Primary switch
more info
-20 to 20 V, 31 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
2.7 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
105 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Synchronous rectifier, Primary switch
more info
-20 to 20 V, 2 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
2.7 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
105 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
DC/DC conversion
more info
-20 to 20 V, 5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.1 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
67 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
DC/DC Converters, Off-line UPS, Distributed Power ...
more info
-20 to 20 V, 5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
DC-DC conversion
more info
-25 to 25 V, 2.5 W, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.2 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
255 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Active Clamp switch, Load switch
more info
-20 to 20 V, 2.5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Synchronous rectifier, Load switch
more info
-20 to 20 V, 5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Primary Switch in Insolated DC-DC, Synchronous Rec...
more info
-20 to 20 V, 2.5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
more info

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