The CXT-PLA3SA12550A from Cissoid is a 3-Phase SiC MOSFET that is ideal for inverter applications. It has a drain-source voltage of up to 1200 V and a gate threshold voltage of up to 3.5 V, and a drain-source on-resistance of 2.53 milli-ohms. This MOSFET has a continuous drain current of up to 550 A and a pulsed drain current of less than 720 A. This MOSFET features under voltage lockout (UVLO) on the Vcc pin and internally generated secondary supplies, desaturation protection, soft shutdown turn-off (SSD) and gate-source short-circuit protection for safety and high reliability. It offers negative gate drive and active miller clamping (AMC) operations. This SiC MOSFET is available in a module that measures 104 x 154 x 34 mm.
