CXT-PLA3SA12550A

MOSFET by Cissoid (4 more products)

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CXT-PLA3SA12550A Image

The CXT-PLA3SA12550A from Cissoid is a 3-Phase SiC MOSFET that is ideal for inverter applications. It has a drain-source voltage of up to 1200 V and a gate threshold voltage of up to 3.5 V, and a drain-source on-resistance of 2.53 milli-ohms. This MOSFET has a continuous drain current of up to 550 A and a pulsed drain current of less than 720 A. This MOSFET features under voltage lockout (UVLO) on the Vcc pin and internally generated secondary supplies, desaturation protection, soft shutdown turn-off (SSD) and gate-source short-circuit protection for safety and high reliability. It offers negative gate drive and active miller clamping (AMC) operations. This SiC MOSFET is available in a module that measures 104 x 154 x 34 mm.

Product Specifications

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Product Details

  • Part Number
    CXT-PLA3SA12550A
  • Manufacturer
    Cissoid
  • Description
    1200 V 3-Phase SiC MOSFET for Inverter Applications

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    104 x 154 x 34 mm
  • Number of Channels
    Hex
  • Continous Drain Current
    550 A
  • Drain Source Resistance
    2.53 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Threshold Voltage
    3.5 V
  • Gate Charge
    1137 nC
  • Temperature operating range
    -40 to 125 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Module
  • Applications
    Inverter Applications

Technical Documents