The G3F09MT12FB2 from Navitas Semiconductor is a Half-Bridge SiC MOSFET Module. It has a drain-source voltage of 1200 V and a drain-source on-state resistance of 9.25 milliohm. This SiC module has a continuous drain current of 109 A and dissipates an output power of 238 W. It is based on trench-assisted planar SiC MOSFET technology and is qualified to withstand harsh stress, temperature variations, and power cycling. It possesses an outstanding short-circuit and avalanche performance with an optimised switching speed for efficient switching. This MOSFET is available as a module that measures 65 x 34 x 16.4 mm and is suitable for EV roadside chargers, solar inverters, energy storage systems (ESS), uninterrupted power supplies (UPS), motor control, drives, smart grid, and distributed generation, induction heating, and welding applications.