1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Navitas Semiconductor
  6. G3F18MT12FB4-T

G3F18MT12FB4-T

Download Datasheet Request Quote

Note : Your request will be directed to Navitas Semiconductor.

G3F18MT12FB4-T Image

The G3F18MT12FB4-T from Navitas Semiconductor is a MOSFET with Continous Drain Current 37 to 53 A, Drain Source Resistance 18.5 to 31.5 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 22 V, Gate Source Threshold Voltage 2 to 4.3 V. Tags: Module. More details for G3F18MT12FB4-T can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G3F18MT12FB4-T
  • Manufacturer
    Navitas Semiconductor
  • Description
    1200 V, 37 to 53 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode View all
  • Technology
    SiC View all
  • Transistor Polarity
    N-Channel View all
  • Number of Channels
    Quad View all
  • Continous Drain Current
    37 to 53 A
  • Drain Source Resistance
    18.5 to 31.5 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 22 V
  • Gate Source Threshold Voltage
    2 to 4.3 V
  • Gate Charge
    196 nC
  • Power Dissipation
    53 to 106 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • Package Type
    Module View all
  • Applications
    EV Road Side Chargers, Solar Inverter, Energy Storage Systems (ESS), Uninterrupted Power Supplies (UPS), Motor Control and Drives, Smart Grid and Distributed Generation, Induction Heating and Welding

Technical Documents
View details on the manufacturer's website
View similar products