The UF4C120070K3S from Qorvo is an N-Channel Enhancement Mode SiC MOSFET. It is based on a unique ‘cascade’ circuit configuration in which a normally-on SiC JFET is co-packaged with Si MOSFET to produce a normally-off SiC FET device. This power MOSFET has a gate-source voltage of up to 20 V and a gate threshold voltage of 4.8 V. It has a drain-source breakdown voltage of over 1200 V and a drain-source on-resistance of 72 mΩ. This MOSFET has a continuous drain current of up to 27.5 A and power dissipation of less than 217 W. It provides an ultra-low gate charge and exhibits exceptional reverse recovery characteristics. This MOSFET is available in a through-hole package and is ideal for EV charging, PV inverters, switch-mode power supplies, power factor correction modules, motor drives, and induction heating applications.