MOSFET by Qorvo (23 more products)

Note : Your request will be directed to Qorvo.

UF4C120070K3S Image

The UF4C120070K3S from Qorvo is an N-Channel Enhancement Mode SiC MOSFET. It is based on a unique ‘cascade’ circuit configuration in which a normally-on SiC JFET is co-packaged with Si MOSFET to produce a normally-off SiC FET device. This power MOSFET has a gate-source voltage of up to 20 V and a gate threshold voltage of 4.8 V. It has a drain-source breakdown voltage of over 1200 V and a drain-source on-resistance of 72 mΩ. This MOSFET has a continuous drain current of up to 27.5 A and power dissipation of less than 217 W. It provides an ultra-low gate charge and exhibits exceptional reverse recovery characteristics. This MOSFET is available in a through-hole package and is ideal for EV charging, PV inverters, switch-mode power supplies, power factor correction modules, motor drives, and induction heating applications.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    1200 V N-Channel Enhancement Mode SiC MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    27.5 A
  • Drain Source Resistance
    72 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.8 V
  • Gate Charge
    37.8 nC
  • Power Dissipation
    217 W
  • Temperature operating range
    -55 to 175 degree C
  • Industry
    Automotive, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    EV charging, Induction Heating, Motor Drive, Power factor correction modules, PV inverter, Switch Mode Power Supplies

Technical Documents