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AG160FNS4FRATCB

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The AG160FNS4FRATCB from ROHM Semiconductor is a MOSFET with Continous Drain Current ±120 A, Drain Source Resistance 2.5 to 4.7 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AG160FNS4FRATCB can be seen below.

Product Specifications

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Product Details

  • Part Number
    AG160FNS4FRATCB
  • Manufacturer
    ROHM Semiconductor
  • Description
    80 V, ±120 A, 150 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode View all
  • Transistor Polarity
    N-Channel View all
  • Number of Channels
    Single View all
  • Continous Drain Current
    ±120 A
  • Drain Source Resistance
    2.5 to 4.7 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    33 to 53 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101 View all
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    HPLF5060T5LSAH
  • Applications
    Automotive Systems

Technical Documents
View details on the manufacturer's website
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