The TK024Z60Z1 from Toshiba is an N-Channel Enhancement-Mode Silicon MOSFET that is designed for switching power supplies. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 3-4 V, and a drain-source on-resistance of 20-24 milli-ohms. This RoHS-compliant MOSFET has high-speed switching properties with lower capacitance. It is available in a through-hole package that measures 41.02 x 15.94 x 5.02 mm.
