The XPQR3004PB from Toshiba is an Automotive Qualified N-channel Enhancement Mode Silicon MOSFET that is ideal for automotive, switching voltage regulators, motor drivers, and DC-DC converter applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of less than 0.47 milli-ohms. This AEC-Q101-qualified power MOSFET has a continuous drain current of up to 400 A and a power dissipation of less than 750 W.  It offers low drain-source on-resistance and low leakage current. This RoHS-complaint MOSFET is available in a surface-mount package that measures 9.9 × 11.81 × 2.3 mm.