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GaN Power Transistors from Manufacturers in United States - Page 4

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 4 of 15
NV6522 Image
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Navitas Semiconductor - NV6522

GaN Power Transistor from Navitas Semiconductor
18 V Automotive-Grade GaN Power IC

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
40 to 94 milli-ohm
Continous Drain Current:
26 to 41 A
Pulsed Drain Current:
38 to 83 A
Output Capacitance:
74 pF
Turn-on Delay Time:
24 to 35 ns
Turn-off Delay Time:
7 to 13 ns
Rise Time:
8 ns
Fall Time:
7 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLT-16L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
TDG650E60BEP Image
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Teledyne e2v HiRel Electronics - TDG650E60BEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Si Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
PCB Mount
Applications:
High efficiency power conversion, High density pow...
Dimensions:
11.00 x 9.02 mm
more info
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Central Semiconductor - CDF56G6517N

GaN Power Transistor from Central Semiconductor
650 V, 17 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 to 140 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5X6A
Applications:
High voltage, Soft switching applications
more info
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Solid State Devices - SGF48N10MUB

GaN Power Transistor from Solid State Devices
100 V, 8 to 10 milli-ohm, 48 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC2234 Image
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Efficient Power Conversion - EPC2234

GaN Power Transistor from Efficient Power Conversion
160 V Automotive-Grade Enhancement Mode Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
160 V
Drain Source Resistance:
6 to 8 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
213 A
Total Charge:
13.8 nC
Input Capacitance:
1386 pF
Output Capacitance:
962 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High Frequency DC/DC Conversion, Wireless Power, C...
Dimensions:
4.6 x 2.6 mm
more info
TP44200NM Image
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Tagore Technology - TP44200NM

GaN Power Transistor from Tagore Technology
650 V GaN HEMT for Charging Applications

Product Specs

Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
180 milli-ohm
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN-22
Applications:
AC-DC Converters, Half Bridge topologies, LED ligh...
Dimensions:
5 x 7 x 0.8 mm
more info
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EPC Space - CDA04N30X1S

GaN Power Transistor from EPC Space
40 V, 30 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.2 to 4 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
100 A
Total Charge:
11.4 nC
Input Capacitance:
1300 pF
Output Capacitance:
800 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
4.8 x 2.2 mm
more info
NV6514C Image
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Navitas Semiconductor - NV6514C

GaN Power Transistor from Navitas Semiconductor
650 V Automotive-Grade GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
18 to 43 milli-ohm
Continous Drain Current:
57 to 90 A
Pulsed Drain Current:
80 to 175 A
Output Capacitance:
143 pF
Turn-on Delay Time:
25 to 41 ns
Turn-off Delay Time:
10 to 19 ns
Rise Time:
8 ns
Fall Time:
11 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
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Teledyne e2v HiRel Electronics - TDG650E30BEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 50 to 150 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 150 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.3 ns
Turn-off Delay Time:
8.2 ns
Rise Time:
4.9 ns
Fall Time:
5.2 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.1 x 8.5 x 0.56 mm
more info
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Central Semiconductor - CDFG6517N

GaN Power Transistor from Central Semiconductor
650 V, 17 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 to 140 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8X8
Applications:
High voltage, Soft switching applications
more info
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Solid State Devices - SGF15E100JUB

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Efficient Power Conversion - EPC2088

GaN Power Transistor from Efficient Power Conversion
100 V, 2.4 to 3.2 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
231 A
Total Charge:
17.8 nC
Input Capacitance:
2703 pF
Output Capacitance:
659 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, BLDC Motor Drives, Sync Rectific...
Dimensions:
3.5 x 1.95 mm
more info
NV6511 Image
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Navitas Semiconductor - NV6511

GaN Power Transistor from Navitas Semiconductor
Automotive-Qualified GaN Power Stage IC

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
70 to 168 milli-ohm
Continous Drain Current:
15 to 23 A
Pulsed Drain Current:
19 to 42 A
Output Capacitance:
49 pF
Turn-on Delay Time:
22 to 32 ns
Turn-off Delay Time:
5 to 11 ns
Rise Time:
8 ns
Fall Time:
6.5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
TDG650E15BEP Image
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Teledyne e2v HiRel Electronics - TDG650E15BEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
5 x 6.6 x 0.51 mm
more info
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Central Semiconductor - CDFG6511N

GaN Power Transistor from Central Semiconductor
650 V, 11.5 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 190 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8X8
Applications:
High voltage, Soft switching applications
more info
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