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GaN Power Transistors from Manufacturers in United States - Page 7

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 7 of 15
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Navitas Semiconductor - NV6128

GaN Power Transistor from Navitas Semiconductor
800 V, 20 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
70 to 145 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
25 to 40 A
Total Charge:
48 nC
Output Capacitance:
47 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
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Teledyne e2v HiRel Electronics - TDG100E90BEPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
100 V, 6 to 20 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
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Solid State Devices - SGF48N10MDB

GaN Power Transistor from Solid State Devices
100 V, 8 to 10 milli-ohm, 48 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC7003 Image
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Efficient Power Conversion - EPC7003

GaN Power Transistor from Efficient Power Conversion
100 V Radiation Hardened E-Mode GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
30 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
1.8 nC
Input Capacitance:
230 pF
Output Capacitance:
119 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space applications: DC-DC power, motor drives, lid...
Dimensions:
1.7 mm x 1.1 mm
more info
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EPC Space - JANSH2N7674UBC

GaN Power Transistor from EPC Space
60 V, 1.1 to 1.8 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
60 V
Drain Source Resistance:
580 milli-ohm
Continous Drain Current:
1.1 to 1.8 A
Total Charge:
0.18 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LCC3
more info
NV6127 Image
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Navitas Semiconductor - NV6127

GaN Power Transistor from Navitas Semiconductor
650 V GaN Power Transistor for Solar Micro-Inverter Applications

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
125 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
24 A
Total Charge:
27 nC
Output Capacitance:
27 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
TDG100E90TEPF Image
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Teledyne e2v HiRel Electronics - TDG100E90TEPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
100 V Enhancement Mode GaN-on-Si Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
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Solid State Devices - SGF30E100Z8DB

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254Z
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC7020 Image
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Efficient Power Conversion - EPC7020

GaN Power Transistor from Efficient Power Conversion
200 V Radiation Hard Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
11 milli-ohm
Continous Drain Current:
39 A
Pulsed Drain Current:
170 A
Total Charge:
11.7 nC
Input Capacitance:
1137 pF
Output Capacitance:
494 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space applications: DC-DC power, motor drives, lid...
Dimensions:
4.6 x 2.6 mm
more info
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EPC Space - JANSH2N7684UFGC

GaN Power Transistor from EPC Space
300 V, 32 to 50 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
300 V
Drain Source Resistance:
35 milli-ohm
Continous Drain Current:
32 to 50 A
Total Charge:
20 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
more info
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Solid State Devices - SGF48N10S1

GaN Power Transistor from Solid State Devices
100 V, 8 to 10 milli-ohm, 48 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD1
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC2307 Image
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Efficient Power Conversion - EPC2307

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement Mode GaN Power Transistor for LiDAR Applications

Product Specs

Configuration:
Single
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
130 A
Total Charge:
10.6 nC
Input Capacitance:
1401 pF
Output Capacitance:
326 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Synchronous Rectification, AC/DC chargers, SMPS, a...
Dimensions:
3 x 5 mm
more info
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EPC Space - EPC7001BC

GaN Power Transistor from EPC Space
40 V, 50 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
10 to 11 milli-ohm
Continous Drain Current:
50 A
Pulsed Drain Current:
120 A
Total Charge:
12 nC
Input Capacitance:
1342 pF
Output Capacitance:
792 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
TDG100E90TEP Image
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Teledyne e2v HiRel Electronics - TDG100E90TEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
100 V, 6 to 20 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
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Solid State Devices - SGF46E70S1

GaN Power Transistor from Solid State Devices
700 V, 30 to 72 milli-ohm, 46 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 48 V
Drain Source Voltage:
700 V
Drain Source Resistance:
30 to 72 milli-ohm
Continous Drain Current:
46 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nC
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
99 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD1
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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