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MOSFETs from Manufacturers in China - Page 45

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 45 of 77
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Oriental Semiconductor - OSS65R099H4T2F

MOSFET from Oriental Semiconductor
650 V, 18 to 28 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 to 28 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
85 to 192 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
PV inverter, On board charger, Server power supply...
more info
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Galaxy Century Microelectronics - 2N5003DW

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1100 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.31 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJG100G08A

MOSFET from Yangjie Electronic Technology
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
3.6 to 4.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
152 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060-8L
Industry:
Industrial, Commercial
Applications:
Battery protection, Load switch, Uninterruptible p...
more info
60N06 Image
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Goford Semiconductor - 60N06

MOSFET from Goford Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
14 to 21 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
85 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESGNR085R052

MOSFET from Hunan Jingxin Microelectronics
85 V, 85 to 110 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 to 110 A
Drain Source Breakdown Voltage:
85 V
Drain Source Resistance:
4.2 to 5.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSS100N65H5MF

MOSFET from Oriental Semiconductor
650 V, 63 to 100 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
63 to 100 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
22 to 51 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
510 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-PLUS
Industry:
Industrial, Commercial
Applications:
EV motor driving system, PV Converter
more info
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Galaxy Century Microelectronics - GBLN3303-S8

MOSFET from Galaxy Century Microelectronics
±20 V, 6 to 10 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6 to 10 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
18 to 45 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJB30GP10A

MOSFET from Yangjie Electronic Technology
-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-30 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
42 to 62 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions
more info
G120P06T Image
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Goford Semiconductor - G120P06T

MOSFET from Goford Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-120 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
7 to 8.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
277 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESGNU085R030

MOSFET from Hunan Jingxin Microelectronics
85 V, 135 to 180 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
135 to 180 A
Drain Source Breakdown Voltage:
85 V
Drain Source Resistance:
2.55 to 3.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
236 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG65R070H4T3EZF

MOSFET from Oriental Semiconductor
650 V, 29.7 to 47 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
29.7 to 47 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
55 to 143 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - GBLN6603-5DL8

MOSFET from Galaxy Century Microelectronics
±20 V, 9 to 34 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
9 to 34 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
13 to 24 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN5X6-8LC
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJB150G06AK

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.7 to 4.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
147 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
Synchronous Rectificatio, Battery Protection Circu...
more info
G50N03K Image
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Goford Semiconductor - G50N03K

MOSFET from Goford Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.5 to 12 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
48 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESGNU10R042

MOSFET from Hunan Jingxin Microelectronics
100 V, 123 to 159 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
123 to 159 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.6 to 4.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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