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MOSFETs from Manufacturers in China - Page 48

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 48 of 77
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Oriental Semiconductor - OSG65R041H4T4ZF

MOSFET from Oriental Semiconductor
650 V, 33 to 52 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 52 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
34.7 to 90 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
330 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - BL8810-6L

MOSFET from Galaxy Century Microelectronics
±10 V, 7 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
24 to 30 milli-ohm
Gate Source Voltage:
±10 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJG40G10B

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
16 to 25 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060-8L
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
G15P04K Image
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Goford Semiconductor - G15P04K

MOSFET from Goford Semiconductor
-40 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-60 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
25 to 70 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESGNU10R17

MOSFET from Hunan Jingxin Microelectronics
100 V, 56 to 73 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 to 73 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
12.5 to 22 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
219 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG65R065K7T4ZF

MOSFET from Oriental Semiconductor
650 V, 30 to 48 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 to 48 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
55 to 138 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263-7L
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - BSS138EDW

MOSFET from Galaxy Century Microelectronics
±20 V, 0.29 to 0.36 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.29 to 0.36 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1000 to 10000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
Applications:
DC-DC converters, Power management functions, Batt...
more info
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Yangjie Electronic Technology - YJG150N03A

MOSFET from Yangjie Electronic Technology
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.58 to 3.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
69 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060-8L
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions, Back...
more info
G3401L Image
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Goford Semiconductor - G3401L

MOSFET from Goford Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
52 to 95 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESGNT085R019

MOSFET from Hunan Jingxin Microelectronics
85 V, 193 to 300 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
193 to 300 A
Drain Source Breakdown Voltage:
85 V
Drain Source Resistance:
1.5 to 1.9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
313 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG60R041H4T4EZF

MOSFET from Oriental Semiconductor
600 V, 39.2 to 62 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39.2 to 62 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
32 to 87 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
360 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - GBLN4403-5DL8

MOSFET from Galaxy Century Microelectronics
±20 V, 12 to 19 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
12 to 19 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
28 to 60 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
23 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5X6-8LC
Industry:
Military, Industrial, Commercial
Applications:
PWM, Load switch
more info
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Yangjie Electronic Technology - YJD50N06A

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
11 to 17 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
21.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions, Moto...
more info
G6P06 Image
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Goford Semiconductor - G6P06

MOSFET from Goford Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
58 to 145 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
4.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESGNU10R028

MOSFET from Hunan Jingxin Microelectronics
100 V, 126 to 180 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
126 to 180 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
2.4 to 2.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
417 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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