MOSFETs from Manufacturers in United States - Page 540

9,089 MOSFETs from 25 manufacturers meet your specification.
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9,089 MOSFETs from 25 Manufacturers
9,089 Products from 25 Manufacturers
Page 540 of 606
60 V, 11.5 to 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
50 to 63 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
38 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Commercial, Industrial
more info
500 V, 18 to 24 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1140 to 1400 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
73 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Industry:
Commercial, Industrial
more info
250 V, 85 to 110 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
51 to 70 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
280 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3P-3L
Industry:
Commercial, Industrial
more info
-20 to 20 V, 0.8 to 1.4 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.35 to 0.6 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
300 to 2700 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.625 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Commercial, Industrial
Applications:
Lavel shifting, Power supply conveter Circuits, Lo...
more info
40 V, 138 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
519 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.36 to 0.42 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
197 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFNW5 (SO-8FL WF)
Industry:
Automotive
Applications:
Motor Drive, Battery Protection, Synchronous Recti...
more info
40 V, 74.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
331 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.63 to 0.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
134 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFNW5 (SO-8FL)
Industry:
Automotive
Applications:
Motor Drive, Battery Protection, Synchronous Recti...
more info
-25 V, 1.1 to 1.5 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.46 A
Drain Source Breakdown Voltage:
-25 V
Drain Source Resistance:
870 to 2000 milliohm
Gate Source Voltage:
-8 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
Industry:
Commercial, Industrial
more info
20 V, 0.8 to 1.1 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
5000 to 7000 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.625 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-523FL
Industry:
Commercial, Industrial
Applications:
Li-Ion Battery Pack
more info
20 V, 0.8 to 1.1 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.6 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
240 to 1250 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.625 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-523FL
Industry:
Commercial, Industrial
Applications:
Li-Ion Battery Pack
more info
650 V N-Channel Enhancement SiC Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
73 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
50 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
348 W
Temperature operating range:
-55 to 175 degree C
Package:
H-PSOF8L
Applications:
Energy Storage, Solar inverters, Switched mode pow...
more info
-20 to 20 V, 2.5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
10 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
DC/DC converter
more info
-20 to 20 V, 2.5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
23 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
more info
-20 to 20 V, 3.1 W, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2.1 A
Drain Source Breakdown Voltage:
-80 V
Drain Source Resistance:
183 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Synchronous rectifier, Load switch
more info
-20 to 20 V, 2 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Inverter, Power Supplies
more info
-20 to 20 V, 2.5 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18.6 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Applications:
Synchronous Buck for Vcore and Server, Notebook Ba...
more info

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