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BST47T1P4K01-VC

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BST47T1P4K01-VC Image

The BST47T1P4K01-VC from ROHM Semiconductor is a MOSFET with Continous Drain Current 33 to 47 A, Drain Source Resistance 26 to 60 milli-ohm, Drain Source Breakdown Voltage 750 V, Gate Source Voltage -4 to 21 V, Gate Source Threshold Voltage 2.8 to 4.8 V. Tags: Through Hole. More details for BST47T1P4K01-VC can be seen below.

Product Specifications

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Product Details

  • Part Number
    BST47T1P4K01-VC
  • Manufacturer
    ROHM Semiconductor
  • Description
    750 V, 33 to 47 A, 227 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode View all
  • Technology
    SiC View all
  • Transistor Polarity
    N-Channel View all
  • Number of Channels
    Hex View all
  • Continous Drain Current
    33 to 47 A
  • Drain Source Resistance
    26 to 60 milli-ohm
  • Drain Source Breakdown Voltage
    750 V
  • Gate Source Voltage
    -4 to 21 V
  • Gate Source Threshold Voltage
    2.8 to 4.8 V
  • Gate Charge
    97 nC
  • Power Dissipation
    227 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    HSDIP20
  • Applications
    Inverter, Converter, (Hybrid) electrical vehicles EV/HEV

Technical Documents
View details on the manufacturer's website
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