The VS-MPY038P120 from Vishay is a Full Bridge Inverter Silicon Carbide MOSFET. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of up to 4.5 V, and a drain-source on-resistance of 33 milli-ohms. This MOSFET has a continuous drain current of over 43 A and a power dissipation of 93 W. It offers high blocking voltage with low on-resistance and high-speed switching with low capacitance. This MOSFET integrates a fast intrinsic diode with low reverse recovery and incorporates PressFit pins locking technology for solder-free board mounting. It is available in a surface-mount package that measures 52 x 34 x 10.3 mm and is ideal for high-frequency switching applications, including solar inverters and EV chargers.