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GaN Power Transistors from Manufacturers in Germany - Page 3

64 GaN Power Transistors from 1 manufacturer meet your specification.
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Infineon Technologies - IGT65R140D2

GaN Power Transistor from Infineon Technologies
650 V, 0.14 to 0.3 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.14 to 0.3 ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
-23 to 23 A
Total Charge:
2.6 nC
Input Capacitance:
130 pF
Output Capacitance:
21 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLR65R140D2

GaN Power Transistor from Infineon Technologies
650 V, 0.14 to 0.3 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.14 to 0.3 ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
-23 to 23 A
Total Charge:
2.6 nC
Input Capacitance:
130 pF
Output Capacitance:
21 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGT65R055D2

GaN Power Transistor from Infineon Technologies
650 V, 0.055 to 0.12 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.055 to 0.12 ohm
Continous Drain Current:
31 A
Pulsed Drain Current:
-60 to 60 A
Total Charge:
6.6 nC
Input Capacitance:
330 pF
Output Capacitance:
53 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
IGLD65R110D2 Image
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Infineon Technologies - IGLD65R110D2

GaN Power Transistor from Infineon Technologies
650 V GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.11 to 0.24 ohm
Continous Drain Current:
14 A
Pulsed Drain Current:
-30 to 30 A
Total Charge:
3.4 nC
Input Capacitance:
170 pF
Output Capacitance:
27 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLT65R025D2

GaN Power Transistor from Infineon Technologies
650 V, 0.025 to 0.053 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.025 to 0.053 ohm
Continous Drain Current:
67 A
Pulsed Drain Current:
-130 to 130 A
Total Charge:
16 nC
Input Capacitance:
770 pF
Output Capacitance:
122 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HDSOP-16
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLD65R055D2

GaN Power Transistor from Infineon Technologies
650 V, 0.055 to 0.12 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.055 to 0.12 ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
-60 to 60 A
Total Charge:
6.6 nC
Input Capacitance:
330 pF
Output Capacitance:
53 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
IGOT65R055D2 Image
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Infineon Technologies - IGOT65R055D2

GaN Power Transistor from Infineon Technologies
650 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.055 to 0.12 ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
-60 to 60 A
Total Charge:
6.6 nC
Input Capacitance:
330 pF
Output Capacitance:
53 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLR65R200D2

GaN Power Transistor from Infineon Technologies
650 V, 0.2 to 0.43 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.2 to 0.43 ohm
Continous Drain Current:
9.2 A
Pulsed Drain Current:
-16 to 16 A
Total Charge:
1.8 nC
Input Capacitance:
90 pF
Output Capacitance:
15 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLT65R110D2

GaN Power Transistor from Infineon Technologies
650 V, 0.11 to 0.24 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.11 to 0.24 ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
-30 to 30 A
Total Charge:
3.4 nC
Input Capacitance:
170 pF
Output Capacitance:
27 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HDSOP-16
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLD65R080D2

GaN Power Transistor from Infineon Technologies
650 V, 0.08 to 0.17 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.08 to 0.17 ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
-42 to 42 A
Total Charge:
4.6 nC
Input Capacitance:
230 pF
Output Capacitance:
37 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
IGT65R035D2 Image
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Infineon Technologies - IGT65R035D2

GaN Power Transistor from Infineon Technologies
650 V GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.035 to 0.075 ohm
Continous Drain Current:
49 A
Pulsed Drain Current:
-90 to 90 A
Total Charge:
11 nC
Input Capacitance:
530 pF
Output Capacitance:
85 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGI60F2020A1L AUMA1

GaN Power Transistor from Infineon Technologies
600 V, 200 to 360 milli-ohm GaN Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
200 to 360 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
14.1 A
Total Charge:
1.5 nC
Input Capacitance:
100 pF
Output Capacitance:
19 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adapters, Server, telecom & networking...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGO60R042D1

GaN Power Transistor from Infineon Technologies
600 V, 37 to 72 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
37 to 72 milli-ohm
Continous Drain Current:
19 A
Pulsed Drain Current:
90 A
Total Charge:
8.8 nC
Input Capacitance:
649 pF
Output Capacitance:
97 pF
Turn-on Delay Time:
13 ns
Turn-off Delay Time:
19 ns
Rise Time:
8 ns
Fall Time:
11 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
IGI60F2727A1L AUMA1 Image
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Infineon Technologies - IGI60F2727A1L AUMA1

GaN Power Transistor from Infineon Technologies
4.5 A GaN Half-Bridge Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
270 to 490 milli-ohm
Continous Drain Current:
4.5 A
Pulsed Drain Current:
12.2 A
Total Charge:
1.2 nC
Input Capacitance:
77 pF
Output Capacitance:
14.6 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adaptors, Low power motor drive, LED l...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGLR60R340D1

GaN Power Transistor from Infineon Technologies
600 V, 270 to 490 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
270 to 490 milli-ohm
Continous Drain Current:
8.2 A
Pulsed Drain Current:
12.2 A
Total Charge:
1.2 nC
Input Capacitance:
87.7 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
7 ns
Turn-off Delay Time:
12 ns
Rise Time:
6 ns
Fall Time:
40 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
more info
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