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GaN Power Transistors from Manufacturers in Germany - Page 4

64 GaN Power Transistors from 1 manufacturer meet your specification.
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Infineon Technologies - IGI60F100A1LAU MA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGOT60R042D1

GaN Power Transistor from Infineon Technologies
600 V, 37 to 72 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
37 to 72 milli-ohm
Continous Drain Current:
19 A
Pulsed Drain Current:
90 A
Total Charge:
8.8 nC
Input Capacitance:
649 pF
Output Capacitance:
97 pF
Turn-on Delay Time:
13 ns
Turn-off Delay Time:
19 ns
Rise Time:
8 ns
Fall Time:
11 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
IGLR60R260D1 Image
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Infineon Technologies - IGLR60R260D1

GaN Power Transistor from Infineon Technologies
600 V Enhancement Mode GaN Power Transistor for SMPS Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
370 milli-ohm
Continous Drain Current:
10.4 A
Pulsed Drain Current:
15.9 A
Total Charge:
1.5 nC
Input Capacitance:
110 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
12 ns
Turn-off Delay Time:
14 ns
Rise Time:
7 ns
Fall Time:
30 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Industrial and Consumer SMPS (based on the half-br...
Dimensions:
6 x 5 x 1.1 mm
more info
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Infineon Technologies - IGI60F1414A1L AUMA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adapters, Server, telecom & networking...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGT60R190D1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
13 ns
Turn-off Delay Time:
12 ns
Rise Time:
14 ns
Fall Time:
14 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
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Infineon Technologies - IGI60F200A1LAU MA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGI60L5050A1M

GaN Power Transistor from Infineon Technologies
600 V, 500 to 1000 milli-ohm GaN Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
500 to 1000 milli-ohm
Continous Drain Current:
3.9 A
Pulsed Drain Current:
6.4 A
Total Charge:
0.58 nC
Input Capacitance:
37.8 pF
Output Capacitance:
7.2 pF
Turn-on Delay Time:
110 ns
Turn-off Delay Time:
110 ns
Rise Time:
170 ns
Fall Time:
90 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Low power motor drives, Low power SMPS
more info
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Infineon Technologies - IGLR60R190D1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
12.8 A
Pulsed Drain Current:
23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
16 ns
Turn-off Delay Time:
13 ns
Rise Time:
12 ns
Fall Time:
14 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
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Infineon Technologies - IGLD60R190D1S

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
8 ns
Rise Time:
6 ns
Fall Time:
14 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
more info
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Infineon Technologies - IGT60R042D1

GaN Power Transistor from Infineon Technologies
600 V, 33 to 64 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
33 to 64 milli-ohm
Continous Drain Current:
23 A
Pulsed Drain Current:
90 A
Total Charge:
8.8 nC
Input Capacitance:
649 pF
Output Capacitance:
97 pF
Turn-on Delay Time:
13 ns
Turn-off Delay Time:
19 ns
Rise Time:
8 ns
Fall Time:
11 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
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Infineon Technologies - IGI60F5050A1L AUMA1

GaN Power Transistor from Infineon Technologies
600 V, 500 to 1000 milli-ohm GaN Transistor

Product Specs

Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
500 to 1000 milli-ohm
Continous Drain Current:
3.8 A
Pulsed Drain Current:
6.4 A
Total Charge:
0.58 nC
Input Capacitance:
37.8 pF
Output Capacitance:
7.2 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Low power motor drive, LED lighting
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGI60F140A1LAU MA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGI60F270A1LAU MA1

GaN Power Transistor from Infineon Technologies
600 V, 140 to 260 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
IGT60R070D1 Image
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Infineon Technologies - IGT60R070D1

GaN Power Transistor from Infineon Technologies
600 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
31 A
Pulsed Drain Current:
60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8-3
Applications:
Industrial, telecom, datacenter SMPS based on the ...
Dimensions:
11.67 x 9.9 x 2.3 mm
more info
IGLD60R190D1 Image
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Infineon Technologies - IGLD60R190D1

GaN Power Transistor from Infineon Technologies
Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R190D1 for ultimate efficiency and reliability

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
190 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
13.5 to 23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
12 ns
Rise Time:
5 ns
Fall Time:
12 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8-1
Applications:
Consumer SMPS and high density chargers based on t...
more info
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