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GaN Power Transistors from Manufacturers in Germany - Page 2

64 GaN Power Transistors from 1 manufacturer meet your specification.
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IGC033S10S1 Image
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Infineon Technologies - IGC033S10S1

GaN Power Transistor from Infineon Technologies
100 V, 21 to 76 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
1.2 to 2.9 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.3 milli-ohm
Continous Drain Current:
21 to 76 A
Pulsed Drain Current:
330 to 700 A
Total Charge:
11 to 14 nC
Input Capacitance:
1200 to 1400 pF
Output Capacitance:
540 to 590 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom & Datacenter 48V IBC, Sync Rectification f...
more info
IGLR70R270D2S Image
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Infineon Technologies - IGLR70R270D2S

GaN Power Transistor from Infineon Technologies
700 V, 7.3 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
700 V
Drain Source Resistance:
0.270 to 0.580 Ohm
Continous Drain Current:
7.3 A
Pulsed Drain Current:
-13 to 13 A
Total Charge:
7.8 nC
Input Capacitance:
74 pF
Output Capacitance:
12 pF
Turn-on Delay Time:
7 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
31 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Consumer applications like charger, adapter, TV po...
more info
IGLR70R140D2S Image
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Infineon Technologies - IGLR70R140D2S

GaN Power Transistor from Infineon Technologies
700 V, 13 A, Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
700 V
Drain Source Resistance:
0.140 to 0.300 Ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
-23 to 23 A
Total Charge:
14 nC
Input Capacitance:
133 pF
Output Capacitance:
22 pF
Turn-on Delay Time:
7 ns
Turn-off Delay Time:
10 ns
Rise Time:
7 ns
Fall Time:
23 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Consumer applications like charger, adapter, TV po...
more info
IGK080B041S Image
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Infineon Technologies - IGK080B041S

GaN Power Transistor from Infineon Technologies
40 V Bidirectional GaN Transistor

Product Specs

Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.9 V
Continous Drain Current:
14 A
Pulsed Drain Current:
70 A
Total Charge:
0.7 to 5.5 nC
Input Capacitance:
387 pF
Output Capacitance:
154 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMT
Applications:
High side load switch, OVP protection in smart pho...
more info
GS-065-030-2-L-MR Image
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Infineon Technologies - GS-065-030-2-L-MR

GaN Power Transistor from Infineon Technologies
650 V Enhancement mode GaN transistor for Solar Inverter Applications

Product Specs

Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Bridgeless totem-pole PFC, Consumer, Industrial, a...
Dimensions:
8 x 8 mm
more info
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Infineon Technologies - IGLR65R270D2

GaN Power Transistor from Infineon Technologies
650 V, 0.27 to 0.58 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.27 to 0.58 ohm
Continous Drain Current:
7.2 A
Pulsed Drain Current:
-13 to 13 A
Total Charge:
1.4 nC
Input Capacitance:
70 pF
Output Capacitance:
12 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLT65R055D2

GaN Power Transistor from Infineon Technologies
650 V, 0.055 to 0.12 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.055 to 0.12 ohm
Continous Drain Current:
31 A
Pulsed Drain Current:
-60 to 60 A
Total Charge:
6.6 nC
Input Capacitance:
330 pF
Output Capacitance:
53 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HDSOP-16
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGT65R025D2

GaN Power Transistor from Infineon Technologies
650 V, 0.025 to 0.053 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.025 to 0.053 ohm
Continous Drain Current:
70 A
Pulsed Drain Current:
-140 to 140 A
Total Charge:
16 nC
Input Capacitance:
770 pF
Output Capacitance:
122 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLT65R035D2

GaN Power Transistor from Infineon Technologies
650 V, 0.035 to 0.075 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.035 to 0.075 ohm
Continous Drain Current:
47 A
Pulsed Drain Current:
-90 to 90 A
Total Charge:
11 nC
Input Capacitance:
530 pF
Output Capacitance:
85 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HDSOP-16
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLT65R045D2

GaN Power Transistor from Infineon Technologies
650 V, 0.045 to 0.096 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.045 to 0.096 ohm
Continous Drain Current:
38 A
Pulsed Drain Current:
-76 to 76 A
Total Charge:
8.4 nC
Input Capacitance:
420 pF
Output Capacitance:
67 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HDSOP-16
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGOT65R035D2

GaN Power Transistor from Infineon Technologies
650 V, 0.035 to 0.075 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.035 to 0.075 ohm
Continous Drain Current:
44 A
Pulsed Drain Current:
-90 to 90 A
Total Charge:
11 nC
Input Capacitance:
530 pF
Output Capacitance:
85 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
IGOT65R025D2 Image
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Infineon Technologies - IGOT65R025D2

GaN Power Transistor from Infineon Technologies
650 V Enhancement Mode GaN Power Transistor for Industrial Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
30 milli-ohm
Continous Drain Current:
61 A
Pulsed Drain Current:
140 A
Total Charge:
16 nC
Input Capacitance:
770 pF
Output Capacitance:
122 pF
Temperature operating range:
-55 to 150 Degree C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
Dimensions:
16.5 x 14.5 x 3.35 mm
more info
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Infineon Technologies - IGOT65R045D2

GaN Power Transistor from Infineon Technologies
650 V, 0.045 to 0.096 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.045 to 0.096 ohm
Continous Drain Current:
34 A
Pulsed Drain Current:
-76 to 76 A
Total Charge:
8.4 nC
Input Capacitance:
420 pF
Output Capacitance:
67 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGT65R045D2

GaN Power Transistor from Infineon Technologies
650 V, 0.045 to 0.096 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.045 to 0.096 ohm
Continous Drain Current:
38 A
Pulsed Drain Current:
-76 to 76 A
Total Charge:
8.4 nC
Input Capacitance:
420 pF
Output Capacitance:
67 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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Infineon Technologies - IGLD65R140D2

GaN Power Transistor from Infineon Technologies
650 V, 0.14 to 0.3 ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
0.14 to 0.3 ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
-23 to 23 A
Total Charge:
2.6 nC
Input Capacitance:
130 pF
Output Capacitance:
21 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8
Applications:
Telecom, Datacenter SMPS, Charger and adapter base...
more info
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