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GaN Power Transistors from Manufacturers in Germany - Page 5

64 GaN Power Transistors from 1 manufacturer meet your specification.
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64 GaN Power Transistors from 1 Manufacturers
64 Products from 1 Manufacturers
Page 5 of 5
IGLD60R070D1 Image
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Infineon Technologies - IGLD60R070D1

GaN Power Transistor from Infineon Technologies
Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R070D1 for ultimate efficiency and reliability

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8-1
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
IGT40R070D1 E8220 Image
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Infineon Technologies - IGT40R070D1 E8220

GaN Power Transistor from Infineon Technologies
400 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
400 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
31 A
Pulsed Drain Current:
60 A
Total Charge:
4.5 nC
Input Capacitance:
382 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
11 ns
Rise Time:
7.5 ns
Fall Time:
9 ns
Temperature operating range:
0 to +150 °C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Class-D Audio Amplifier
Dimensions:
11.67 x 9.9 mm
more info
IGOT60R070D1 Image
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Infineon Technologies - IGOT60R070D1

GaN Power Transistor from Infineon Technologies
600 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20-87
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
IGO60R070D1 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IGO60R070D1

GaN Power Transistor from Infineon Technologies
600 V Enhancement mode GaN power transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20-85
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
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