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GaN Power Transistors from Manufacturers in United States - Page 2

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 2 of 15
SGF15D100JUB Image
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Solid State Devices - SGF15D100JUB

GaN Power Transistor from Solid State Devices
1000 V Depletion Mode GaN Power Transistor for Aerospace Applications

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
-27 to -8 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
140 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
30 nC
Input Capacitance:
135 pF
Output Capacitance:
44 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
Dimensions:
1.760 x 0.420 inches
more info
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Tagore Technology - TP44440HBTRPBF

GaN Power Transistor from Tagore Technology
650 V, 360 to 880 milli-ohm GaN Transistor

Product Specs

Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
360 to 880 milli-ohm
Continous Drain Current:
4 to 6.5 A
Pulsed Drain Current:
7.5 A
Total Charge:
0.75 nC
Input Capacitance:
28 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
10 ns
Rise Time:
14 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
JANSH2N7674UFUBC Image
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EPC Space - JANSH2N7674UFUBC

GaN Power Transistor from EPC Space
60 V Rad-Hard eGaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial, Military, Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 to 72 V
Drain Source Resistance:
340 to 580 milli-ohm
Continous Drain Current:
1 A
Pulsed Drain Current:
4 A
Total Charge:
142 to 184 nC
Input Capacitance:
18 to 22 pF
Output Capacitance:
17 to 30 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Commercial Satellite EPS & Avionics, Deep Space Pr...
Dimensions:
3.25 x 2.7 mm
more info
NV6513 Image
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Navitas Semiconductor - NV6513

GaN Power Transistor from Navitas Semiconductor
-7 to 650 V, 33 to 53 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
32 to 77 milii-ohm
Continous Drain Current:
33 to 53 A
Pulsed Drain Current:
48 to 106 A
Output Capacitance:
91 pF
Turn-on Delay Time:
25 to 37 ns
Turn-off Delay Time:
7 to 14 ns
Rise Time:
8 ns
Fall Time:
8 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
TDG650E60TEP Image
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Teledyne e2v HiRel Electronics - TDG650E60TEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 11 to 60 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
9 x 7.6 x 0.54 mm
more info
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Central Semiconductor - CCSPG1060N

GaN Power Transistor from Central Semiconductor
100 V, 60 A, GaN Transistor

Product Specs

Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 5.5 milli-ohm
Continous Drain Current:
60 A
Total Charge:
9.2 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CSP3.5X2
Applications:
EV charging stations, Microinverters, and highly e...
more info
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Solid State Devices - SGF46E70M

GaN Power Transistor from Solid State Devices
700 V, 30 to 72 milli-ohm, 46 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 48 V
Drain Source Voltage:
700 V
Drain Source Resistance:
30 to 72 milli-ohm
Continous Drain Current:
46 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nC
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
99 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC2057 Image
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Efficient Power Conversion - EPC2057

GaN Power Transistor from Efficient Power Conversion
50 V Enhancement Mode GaN FET

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
50 V
Drain Source Resistance:
6 to 8.5 milli-ohm
Continous Drain Current:
9.6 A
Pulsed Drain Current:
66 A
Total Charge:
3.5 nC
Input Capacitance:
444 pF
Output Capacitance:
218 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC Converters, Isolated DC-DC Converters, USB-C...
Dimensions:
1.5 x 1.2 mm
more info
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Tagore Technology - TP44200NMTRPBF

GaN Power Transistor from Tagore Technology
650 V, 180 to 440 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Output Capacitance:
18 pF
Turn-on Delay Time:
17 ns
Turn-off Delay Time:
23 ns
Rise Time:
11 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
As switching FETs in singles, or in pairs as half-...
Dimensions:
5.7 x 0.85 mm
more info
FBS-GAM02-P-R50 Image
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EPC Space - FBS-GAM02-P-R50

GaN Power Transistor from EPC Space
Rad-Hard Multifunctional Power Module

Product Specs

Configuration:
Single
Industry:
Space, Industrial, Commercial
Drain Source Voltage:
0.83 to 1.15 V
Drain Source Resistance:
9 to 28 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
15 A
Output Capacitance:
500 to 1150 pF
Turn-on Delay Time:
45 to 150 ns
Turn-off Delay Time:
45 to 190 ns
Rise Time:
6.5 to 28 ns
Fall Time:
5 to 25 ns
Temperature operating range:
-40 to 130 Degree C
Package Type:
Surface Mount
Package:
SMT
Applications:
Power Switches/Actuators, Single and Multi-Phase M...
more info
NV6512C Image
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Navitas Semiconductor - NV6512C

GaN Power Transistor from Navitas Semiconductor
-7 to 650 V, 26 to 41 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
40 to 94 milli-ohm
Continous Drain Current:
26 to 41 A
Pulsed Drain Current:
38 to 83 A
Output Capacitance:
74 pF
Turn-on Delay Time:
24 to 35 ns
Turn-off Delay Time:
7 to 13 ns
Rise Time:
8 ns
Fall Time:
7 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
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Teledyne e2v HiRel Electronics - TDG650E601TSPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 25 to 65 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 to 65 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 ns
Turn-off Delay Time:
9.8 ns
Rise Time:
8.5 ns
Fall Time:
7.7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Battery management, Traction Drive, dc-dc Converte...
Dimensions:
9 x 7.6 x 0.54 mm
more info
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Central Semiconductor - CPG004-CDFG6517N

GaN Power Transistor from Central Semiconductor
650 V, 17 A, GaN Transistor

Product Specs

Industry:
Military, Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Output Capacitance:
82 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High voltage, Soft switching applications
more info
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Solid State Devices - SGF15E100J

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC2901C_55 Image
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Efficient Power Conversion - EPC2901C_55

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.7 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3.1 to 7 milli-ohm
Continous Drain Current:
36 A
Pulsed Drain Current:
150 A
Total Charge:
10 nC
Input Capacitance:
1020 pF
Output Capacitance:
650 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High-Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
4.1 x 1.6 mm
more info
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