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MOSFETs from Manufacturers in China - Page 14

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 14 of 77
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Galaxy Century Microelectronics - BSS138BKW

MOSFET from Galaxy Century Microelectronics
±20 V, 0.45 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
560 to 3000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-323
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJM05N06A

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
35 to 49 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Industry:
Industrial, Commercial
Applications:
Battery management, Load switch, Power management
more info
7N60F Image
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Goford Semiconductor - 7N60F

MOSFET from Goford Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.2 to 7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1050 to 1300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
47 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESPQ06R20

MOSFET from Hunan Jingxin Microelectronics
-60 V, -31 to -40 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-31 to -40 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
16.5 to 23.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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VBsemi Electronics - VBGQA1400

MOSFET from VBsemi Electronics
40 V, 150 to 250 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 to 250 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.8 to 2 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
8.3 to 136 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN8(5X6)
Industry:
Industrial, Commercial
more info
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Oriental Semiconductor - OSQ120R025H4T2F_NB

MOSFET from Oriental Semiconductor
1200 V, 50 to 72 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 to 72 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
25 to 48 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L-NL
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - T2N7002H

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1000 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJL2301G

MOSFET from Yangjie Electronic Technology
-19 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-19 V
Drain Source Resistance:
65 to 162 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Video monitor, Power management
more info
G06N10 Image
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Goford Semiconductor - G06N10

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
195 to 240 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switching application, LED lighting
more info
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Hunan Jingxin Microelectronics - ESNR07R075

MOSFET from Hunan Jingxin Microelectronics
68 V, 87 to 108 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
87 to 108 A
Drain Source Breakdown Voltage:
68 V
Drain Source Resistance:
5.8 to 7.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
192 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ120R035K7T2F

MOSFET from Oriental Semiconductor
1200 V, 38 to 48 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 to 48 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
35 to 65 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7L
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - BL05N60C

MOSFET from Galaxy Century Microelectronics
±20 V, 0.6 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.6 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 2500 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-50 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJG98G08H

MOSFET from Yangjie Electronic Technology
85 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
98 A
Drain Source Breakdown Voltage:
85 V
Drain Source Resistance:
5 to 10 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060-8L
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
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Goford Semiconductor - G9N40T

MOSFET from Goford Semiconductor
400 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
515 to 607 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
DC-DC & DC-AC Converters for telecom, industrial a...
more info
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Hunan Jingxin Microelectronics - ESP10N10B

MOSFET from Hunan Jingxin Microelectronics
100 V, 3.3 to 4.3 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.3 to 4.3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
88 to 127 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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