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MOSFETs from Manufacturers in China - Page 16

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 16 of 77
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Oriental Semiconductor - OSG65R130FT3ZF-F

MOSFET from Oriental Semiconductor
650 V, 15.8 to 25 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15.8 to 25 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
99 to 248 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
34 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - GBLH6602-3DL8

MOSFET from Galaxy Century Microelectronics
±20 V, -6.4 to 9.2 A Dual N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-6.4 to 9.2 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
60 to 250 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
14 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3X3-8LC
Industry:
Military, Industrial, Commercial
Applications:
Synchronous Rectification, Motor Control, Protable...
more info
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Yangjie Electronic Technology - YJP90G12A

MOSFET from Yangjie Electronic Technology
120 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
90 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
7 to 11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
166 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
GT088N06T Image
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Goford Semiconductor - GT088N06T

MOSFET from Goford Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
8 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS or LED Driver, U...
more info
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Hunan Jingxin Microelectronics - ES35N06A

MOSFET from Hunan Jingxin Microelectronics
60 V, 16 to 20 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
26 to 45 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSS60R099TF

MOSFET from Oriental Semiconductor
600 V, 19 to 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 30 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
80 to 192 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
219 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial, Automotive
Applications:
PC Power, LED lighting, Telecom power, Server powe...
more info
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Galaxy Century Microelectronics - TBSS7001-6L

MOSFET from Galaxy Century Microelectronics
±20 V, -0.35 A Dual P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.35 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1800 to 5000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Military, Industrial, Commercial
Applications:
P-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJP70G10A

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
7.2 to 11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switching application, Hard switched and hig...
more info
GT095N10S Image
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Goford Semiconductor - GT095N10S

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8.2 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
8 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS or LED Driver, U...
more info
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Hunan Jingxin Microelectronics - ES4435

MOSFET from Hunan Jingxin Microelectronics
-30 V, -8.0 to -10.5 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-8.0 to -10.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
13.5 to 27 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG65R070FT3F-F

MOSFET from Oriental Semiconductor
650 V, 29.7 to 47 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
29.7 to 47 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
53 to 141 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - GBLH2201DF2

MOSFET from Galaxy Century Microelectronics
±12 V, -3 to 3 A Dual N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
55 to 100 milli-ohm
Gate Source Voltage:
±12 V
Power Dissipation:
0.77 to 1 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN2020-6LC
Industry:
Military, Industrial, Commercial
Applications:
Load Switch, PWM Application
more info
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Yangjie Electronic Technology - YJL3404J

MOSFET from Yangjie Electronic Technology
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
19 to 35 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.65 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
10N60 Image
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Goford Semiconductor - 10N60

MOSFET from Goford Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 10 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
620 to 750 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
162 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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Oriental Semiconductor - OSQ65R060K7T3F

MOSFET from Oriental Semiconductor
650 V, 30 to 38 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 to 38 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
60 to 103 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7L
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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