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MOSFETs from Manufacturers in China - Page 15

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 15 of 77
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Oriental Semiconductor - OSQ65R028H4T2F_NB

MOSFET from Oriental Semiconductor
650 V, 48 to 61 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 61 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
28 to 56 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
234 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L-NL
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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Galaxy Century Microelectronics - BSS5003-6L

MOSFET from Galaxy Century Microelectronics
±20 V, 0.31 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.31 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1100 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJQ4606A

MOSFET from Yangjie Electronic Technology
-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 17 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
14 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 to 12 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Industrial, Commercial
Applications:
Wireless charger, Load switch, Power management
more info
G9N40F Image
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Goford Semiconductor - G9N40F

MOSFET from Goford Semiconductor
400 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
470 to 600 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
134 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ES3907

MOSFET from Hunan Jingxin Microelectronics
-60 V, -7.3 to -9.4 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7.3 to -9.4 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
19 to 28 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ65R045K7T2F

MOSFET from Oriental Semiconductor
650 V, 30 to 43 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 to 43 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
45 to 79 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
166 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7L
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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Galaxy Century Microelectronics - BSS131

MOSFET from Galaxy Century Microelectronics
±20 V, 0.11 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.11 A
Drain Source Breakdown Voltage:
240 V
Drain Source Resistance:
13000 to 20000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
Applications:
Motor control, DC-DC converters, Power management ...
more info
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Yangjie Electronic Technology - YJL2312AL

MOSFET from Yangjie Electronic Technology
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.6 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
12 to 35 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
PWM application, Load switch
more info
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Goford Semiconductor - G34N20

MOSFET from Goford Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
61 to 85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
230 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Active power factor correction, Switching Mode Pow...
more info
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Hunan Jingxin Microelectronics - ES3347

MOSFET from Hunan Jingxin Microelectronics
-30 V, -30 to -39 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to -39 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8 to 18 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3x3-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ120R035H4T2F_NB

MOSFET from Oriental Semiconductor
1200 V, 40 to 46 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 to 46 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
35 to 65 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
246 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L-NL
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - BL1213-6L

MOSFET from Galaxy Century Microelectronics
±8 V, -1.24 to 1.34 A Dual N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.24 to 1.34 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
220 to 2200 milli-ohm
Gate Source Voltage:
±8 V
Power Dissipation:
1.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJQ23GP06A

MOSFET from Yangjie Electronic Technology
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-22.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
35 to 60 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
43 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Automotive, Industrial, Commercial
Applications:
Automotive Systems, Industrial DC/DC Conversion Ci...
more info
G60N10T Image
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Goford Semiconductor - G60N10T

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
13 to 30 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ES3400A

MOSFET from Hunan Jingxin Microelectronics
30 V, 4.6 to 5.8 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.6 to 5.8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
21 to 51 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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