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MOSFETs from Manufacturers in China - Page 4

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 4 of 77
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VBsemi Electronics - VBP115MR03

MOSFET from VBsemi Electronics
1500 V, 2.2 to 3 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.2 to 3 A
Drain Source Breakdown Voltage:
1500 V
Drain Source Resistance:
5000 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO247
Industry:
Industrial, Commercial
more info
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Galaxy Century Microelectronics - TBSS138BK

MOSFET from Galaxy Century Microelectronics
±20 V, 0.5 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
560 to 3000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.37 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJL2301F

MOSFET from Yangjie Electronic Technology
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
81 to 215 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Video monitor, Power management
more info
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Goford Semiconductor - 2002A

MOSFET from Goford Semiconductor
190 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
190 V
Drain Source Resistance:
395 to 560 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Industrial, Commercial
Applications:
Power switching application, Hard switched and hig...
more info
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Hunan Jingxin Microelectronics - ESPQ10R94

MOSFET from Hunan Jingxin Microelectronics
-100 V, -14 to -18 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14 to -18 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
75 to 96 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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VBsemi Electronics - VBQF1638

MOSFET from VBsemi Electronics
60 V, 24 to 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 to 30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
28 to 70 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
8.3 to 136 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN8(3X3)
Industry:
Industrial, Commercial
more info
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Oriental Semiconductor - OSG70R290FF

MOSFET from Oriental Semiconductor
700 V, 9.5 to 15 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.5 to 15 A
Drain Source Breakdown Voltage:
700 V
Drain Source Resistance:
245 to 660 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
32 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS, Hard Switching ...
more info
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Galaxy Century Microelectronics - BL1213

MOSFET from Galaxy Century Microelectronics
±8 V, -0.65 to 0.82 A Dual N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.65 to 0.82 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
220 to 2200 milli-ohm
Gate Source Voltage:
±8 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJL3139KAX

MOSFET from Yangjie Electronic Technology
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
580 to 2000 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.18 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Industrial, Commercial
Applications:
Interfacing, Logic switch, Load switch, Power mana...
more info
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Goford Semiconductor - SLP740C

MOSFET from Goford Semiconductor
400 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10.5 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
430 to 550 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
139 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESPU06R30

MOSFET from Hunan Jingxin Microelectronics
-60 V, -18 to -24 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 to -24 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
27 to 38 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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VBsemi Electronics - VBP112MC30

MOSFET from VBsemi Electronics
1200 V, 18 to 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 to 30 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247
Industry:
Industrial, Commercial
Applications:
Server and Telecom power supplies, Switch mode pow...
more info
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Oriental Semiconductor - OSG60R125FT4ZF

MOSFET from Oriental Semiconductor
600 V, 13.9 to 22 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13.9 to 22 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
109 to 270 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
34 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - T2N7002HT

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1000 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-523
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJL2102W

MOSFET from Yangjie Electronic Technology
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
57 to 98 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-323
Industry:
Industrial, Commercial
Applications:
PWM application, Load switch
more info
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