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MOSFETs from Manufacturers in China - Page 9

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
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Hunan Jingxin Microelectronics - ESPQ06R21

MOSFET from Hunan Jingxin Microelectronics
-60 V, -32 to -41 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-32 to -41 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
18.0 to 23.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
69 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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VBsemi Electronics - VBGQA1202N

MOSFET from VBsemi Electronics
200 V, 30 to 50 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 to 50 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
1.8 to 3.6 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
8.3 to 136 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN8(5X6)
Industry:
Industrial, Commercial
more info
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Oriental Semiconductor - OSQ120R060HT2F

MOSFET from Oriental Semiconductor
1200 V, 24 to 32 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 to 32 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 to 117 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
154 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - BL1014L

MOSFET from Galaxy Century Microelectronics
±12 V, 0.6 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
335 to 540 milli-ohm
Gate Source Voltage:
±12 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN1006-3
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJM05GP06A

MOSFET from Yangjie Electronic Technology
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
40 to 70 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Industry:
Industrial, Commercial
Applications:
Power management, Load switch
more info
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Goford Semiconductor - SLF740C

MOSFET from Goford Semiconductor
400 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10.5 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
430 to 550 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESNR04R030

MOSFET from Hunan Jingxin Microelectronics
40 V, 60 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 to 80 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.2 to 3.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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VBsemi Electronics - VBP112MC30-4L

MOSFET from VBsemi Electronics
1200 V, 18 to 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 to 30 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L
Industry:
Industrial, Commercial
Applications:
Server and Telecom power supplies, Switch mode pow...
more info
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Oriental Semiconductor - OSQ120R025K7T2F

MOSFET from Oriental Semiconductor
1200 V, 55 to 77 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 to 77 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
25 to 48 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
340 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7L
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - 2N7002HV

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1000 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJG60G10B

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
7.5 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
88 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060
Industry:
Industrial, Commercial
Applications:
High Frequency Switching, Synchronous Rectificatio...
more info
GT52N10T Image
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Goford Semiconductor - GT52N10T

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.3 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters, Synchronous Rectif...
more info
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Hunan Jingxin Microelectronics - ESS8205

MOSFET from Hunan Jingxin Microelectronics
19 V, 4.7 to 6.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
4.7 to 6.0 A
Drain Source Breakdown Voltage:
19 V
Drain Source Resistance:
20 to 35 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSSOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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VBsemi Electronics - VBP112MC26-4L

MOSFET from VBsemi Electronics
1200 V, 26 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
58 milli-ohm
Gate Source Voltage:
-4 to 22 V
Package:
TO247-4L
Industry:
Industrial, Commercial
more info
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Oriental Semiconductor - OSQ120R080H4T3F

MOSFET from Oriental Semiconductor
1200 V, 17 to 24 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 to 24 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 151 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
115 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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