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MOSFETs from Manufacturers in China - Page 8

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 8 of 77
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Galaxy Century Microelectronics - BL12K0N20-6L

MOSFET from Galaxy Century Microelectronics
±20 V, 0.9 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.9 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
1200 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Military, Industrial, Commercial
Applications:
Power switching application, Hard switching and hi...
more info
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Yangjie Electronic Technology - YJQ10N02A

MOSFET from Yangjie Electronic Technology
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
7.8 to 18.5 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN2x2-6L
Industry:
Industrial, Commercial
Applications:
Battery protection, Load switch, Power management
more info
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Goford Semiconductor - G34N20F

MOSFET from Goford Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
61 to 85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
230 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
Active power factor correction, Switching Mode Pow...
more info
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Hunan Jingxin Microelectronics - ESNU07R086

MOSFET from Hunan Jingxin Microelectronics
68 V, 52 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
52 to 80 A
Drain Source Breakdown Voltage:
68 V
Drain Source Resistance:
6.6 to 8.6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
147 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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VBsemi Electronics - VBGQA1601

MOSFET from VBsemi Electronics
60 V, 120 to 200 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 to 200 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1.3 to 2.6 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
8.3 to 136 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN8(5X6)
Industry:
Industrial, Commercial
more info
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Oriental Semiconductor - OSQ65R045HT2F

MOSFET from Oriental Semiconductor
650 V, 30 to 43 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 to 43 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
45 to 79 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
166 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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Galaxy Century Microelectronics - GBLH3302-5DL8

MOSFET from Galaxy Century Microelectronics
±20 V, -30 to 35 A Dual N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-30 to 35 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
11 to 32 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
28 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5X6-8LC
Industry:
Military, Industrial, Commercial
Applications:
Synchronous Rectification, Motor Control, Protable...
more info
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Yangjie Electronic Technology - YJG80GP06B

MOSFET from Yangjie Electronic Technology
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-80 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
6.5 to 8.5 milliohm
Gate Source Voltage:
-18 to 18 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060-8L
Industry:
Industrial, Commercial
Applications:
Power management, Portable equipment
more info
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Goford Semiconductor - 840

MOSFET from Goford Semiconductor
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
650 to 850 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
139 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESNQ06R29

MOSFET from Hunan Jingxin Microelectronics
60 V, 21 to 27 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 27 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 to 40 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
46 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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VBsemi Electronics - VBQA3151M

MOSFET from VBsemi Electronics
150 V, 6.4 to 8 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6.4 to 8 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
90 to 225 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
8.3 to 136 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN8(5X6)-B
Industry:
Industrial, Commercial
more info
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Oriental Semiconductor - OSQ120R060K7T2F

MOSFET from Oriental Semiconductor
1200 V, 26 to 37 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 to 37 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 to 117 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
174 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7L
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - T2N7002HL

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1000 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN1006-3
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJL3407AL

MOSFET from Yangjie Electronic Technology
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
36 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
Battery management, Load switch, Power management
more info
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Goford Semiconductor - G4N65K

MOSFET from Goford Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
2000 to 2400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supply (SMPS), Uninterruptible P...
more info
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