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MOSFETs from Manufacturers in Germany - Page 63

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 63 of 89
IAUT165N08S5N029 Image
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Infineon Technologies - IAUT165N08S5N029

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 to 165 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.4 to 4.4 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
167 W
Temperature operating range:
-55 to 175 Degree C
Package:
P/G-HSOF-8-1
Applications:
Automotive
more info
IPD30N08S2-22 Image
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Infineon Technologies - IPD30N08S2-22

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
17.4 to 21.5 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
136 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO252-3-11
Applications:
Automotive
more info
IAUC60N10S5L110 Image
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Infineon Technologies - IAUC60N10S5L110

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 to 60 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
10 to 15.3 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
88 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8-33
Applications:
Automotive
more info
IPI120N08S4-04 Image
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Infineon Technologies - IPI120N08S4-04

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
108 to 120 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
3.5 to 4.4 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO262-3-1
Applications:
Automotive
more info
IAUC100N08S5N043 Image
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Infineon Technologies - IAUC100N08S5N043

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
76 to 100 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.1 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8
Applications:
Automotive
more info
IPD50N08S4-13 Image
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Infineon Technologies - IPD50N08S4-13

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
11.2 to 13.2 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
72 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO252-3-313
Applications:
Automotive
more info
IPD90N10S4-06 Image
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Infineon Technologies - IPD90N10S4-06

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
72 to 90 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
5.9 to 6.7 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
136 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO252-3-313
Applications:
Automotive
more info
IPP120N10S4-03 Image
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Infineon Technologies - IPP120N10S4-03

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3 to 3.9 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO220-3-1
Applications:
Automotive
more info
IPG20N10S4L-35 Image
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Infineon Technologies - IPG20N10S4L-35

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 to 20 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
29 to 45 Mohms
Gate Source Voltage:
16 V
Power Dissipation:
43 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8-4
Applications:
Automotive
more info
IPB160N08S4-03 Image
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Infineon Technologies - IPB160N08S4-03

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 to 160 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.6 to 3.2 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-7-3
Applications:
Automotive
more info
IPP80N08S4-06 Image
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Infineon Technologies - IPP80N08S4-06

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.7 to 5.8 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO220-3-1
Applications:
Automotive
more info
IPB120N10S4-05 Image
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Infineon Technologies - IPB120N10S4-05

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
95 to 120 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.2 to 5.3 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
IPP100N08S2L-07 Image
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Infineon Technologies - IPP100N08S2L-07

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
98 to 100 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
4.7 to 8.7 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO220-3-1
Applications:
Automotive
more info
IPB70N10S3L-12 Image
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Infineon Technologies - IPB70N10S3L-12

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 70 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
9.8 to 15.8 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
IPB180N08S4-02 Image
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Infineon Technologies - IPB180N08S4-02

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
180 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.8 to 2.2 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
277 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-7-3
Applications:
Automotive
more info
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