MOSFETs from Manufacturers in Germany

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
1,322 Products from 3 Manufacturers
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2300 V, 1335 A, 0.02 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1335 A
Drain Source Breakdown Voltage:
2300 V
Drain Source Resistance:
0.95 to 2.88 milli-ohm
Gate Source Voltage:
-7 to 20 V
Power Dissipation:
0.02 W
Industry:
Industrial, Commercial
more info
AEC-Q101 Qualified N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 to 50 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5.5 to 12 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
35.7 W
Temperature operating range:
-55 to 175 Degree C
Package:
QFN
Industry:
Industrial, Commercial
Applications:
Power Management Units, Battery Powered Devices, L...
more info
75 V, 70 to 100 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 to 100 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
6 to 10.5 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
2300 V, 1330 A, 0.02 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1330 A
Drain Source Breakdown Voltage:
2300 V
Drain Source Resistance:
0.95 to 2.88 milli-ohm
Gate Source Voltage:
-7 to 20 V
Power Dissipation:
0.02 W
Industry:
Industrial, Commercial
more info
AEC-Q101 Qualified N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 69 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
5.5 to 9.5 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial
Applications:
DC/DC Converters, Power Supplies, DC Drives, Synch...
more info
75 V, 10 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 80 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
5 to 9 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
241 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
2300 V Silicon Carbide MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1070 A
Drain Source Breakdown Voltage:
2300 V
Drain Source Resistance:
1.27 to 3.84 milli-ohm
Gate Source Voltage:
-7 to 20 V
Power Dissipation:
0.02 W
Industry:
Industrial, Commercial
more info
650 V Silicon Carbide MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 to 150 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
12 to 20 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
550 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Commercial, Industrial, Electric Vehicle
Applications:
EV Charging Stations, Solar Inverter, Battery Char...
more info
75 V, 170 to 220 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
170 to 220 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
2.7 to 4.0 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
370 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
2300 V, 710 A, 0.02 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
710 A
Drain Source Breakdown Voltage:
2300 V
Drain Source Resistance:
1.9 to 5.8 milli-ohm
Gate Source Voltage:
-7 to 20 V
Power Dissipation:
0.02 W
Industry:
Industrial, Commercial
more info
1200 V Automotive-Qualified Silicon Carbide MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Applications:
EV Charging Stations, Solar Inverter, Battery Char...
more info
75 V, 70 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 to 80 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
6.5 to 13 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
840 V, 38.2 to 53 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38.2 to 53 A
Drain Source Breakdown Voltage:
840 V
Drain Source Resistance:
30 to 43.0 milli-ohm
Gate Source Voltage:
-11 to 25 V
Power Dissipation:
217 W
Temperature operating range:
-55 to 175 Degree C
Package:
Q-DPAK
Industry:
Industrial, Commercial
Applications:
Solid state relays and circuit breakers, EV chargi...
more info
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14 to 23.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
QFN
Industry:
Commercial, Industrial
Applications:
Power management Units, DC/DC converter, Battery-p...
more info
68 V, 75 to 84 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 to 84 A
Drain Source Breakdown Voltage:
68 V
Drain Source Resistance:
5.6 to 9.89 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info

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